Effect of temperature on the electronic current of two dimensional quantum well in AlGaN/GaN high electron mobility transistors (HEMT)

Author(s):  
R. Yahyazadeh ◽  
Z. Hashempour
2013 ◽  
Vol 114 (3) ◽  
pp. 033105 ◽  
Author(s):  
N. Nader Esfahani ◽  
R. E. Peale ◽  
W. R. Buchwald ◽  
C. J. Fredricksen ◽  
J. R. Hendrickson ◽  
...  

2007 ◽  
Vol 36 (2) ◽  
pp. 99-104 ◽  
Author(s):  
Brian R. Bennett ◽  
J. Brad Boos ◽  
Mario G. Ancona ◽  
N. A. Papanicolaou ◽  
Graham A. Cooke ◽  
...  

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