Iron Redistribution Studies in Adjacent Acceptor-Doped lnP Layers: Application to as New Si-BH Laser Structure

Sixth International Conference Metalorganic Vapor Phase Epitaxy ◽

10.1109/movpe.1992.665054 ◽

2005 ◽

Author(s):

D. Robein ◽

C. Kazmierski ◽

D. Mathoorasing ◽

B. Rose

Keyword(s):

Laser Structure ◽

Download Full-text

2-ps RC product new SI-BH laser structure for far over 20-GHz operation

10.1117/12.59143 ◽

1992 ◽

Author(s):

Christophe Kazmierski ◽

D. Robein ◽

D. Mathoorasing

Keyword(s):

Laser Structure ◽

Download Full-text

Iron redistribution studies in adjacent acceptor-doped InP layers: application to a new SI-BH laser structure

Journal of Crystal Growth ◽

10.1016/0022-0248(92)90551-s ◽

1992 ◽

Vol 124 (1-4) ◽

pp. 777-781 ◽

Author(s):

D. Robein ◽

C. Kazmierski ◽

D. Mathoorasing ◽

B. Rose ◽

Y. Gao

Keyword(s):

Laser Structure ◽

Download Full-text

The largest QWI in the InGaP/InAlGaP laser structure using high compressive strain at elevated temperatures

2020 11th IEEE Annual Ubiquitous Computing, Electronics & Mobile Communication Conference (UEMCON) ◽

10.1109/uemcon51285.2020.9298101 ◽

2020 ◽

Author(s):

M. A. Majid

Keyword(s):

Elevated Temperatures ◽

Compressive Strain ◽

Laser Structure

Download Full-text

Development of new Si-based waveguide: photonic crystal cladded waveguide

2004 10th International Workshop on Computational Electronics (IEEE Cat No 04EX915) GROUP4-04 ◽

10.1109/group4.2004.1416730 ◽

2005 ◽

Author(s):

Yasha Yi ◽

S. Akiyama ◽

Xiaoman Duan ◽

L.C. KImerling

Keyword(s):

Photonic Crystal ◽

New Si ◽

Waveguide Photonic Crystal

Download Full-text

Edge-Emitting Lead Salt Mid-Infrared Laser Structure on BaF2 (110) Substrate

Journal of Electronic Materials ◽

10.1007/s11664-009-0796-1 ◽

2009 ◽

Vol 38 (9) ◽

pp. 1952-1955 ◽

Author(s):

D. Li ◽

S. Mukherjee ◽

J. Ma ◽

G. Bi ◽

D. Ray ◽

...

Keyword(s):

Infrared Laser ◽

Laser Structure ◽

Lead Salt ◽

Download Full-text

Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In 0.53 Ga 0.47 As/In 0.53 (Ga 0.6 Al 0.4 ) 0.47 As quantum well laser structure with InGaAlAs digital alloys by thermal annealing

Applied Physics A ◽

10.1007/s00339-002-1978-3 ◽

2003 ◽

Vol 76 (6) ◽

pp. 979-982 ◽

Author(s):

J.S. Yu ◽

J.D. Song ◽

J.M. Kim ◽

S.J. Bae ◽

Y.T. Lee ◽

...

Keyword(s):

Quantum Well ◽

Thermal Annealing ◽

Laser Structure ◽

Quantum Well Laser ◽

Download Full-text

Very low threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM-VPE

Electronics Letters ◽

10.1049/el:19820590 ◽

1982 ◽

Vol 18 (20) ◽

pp. 870 ◽

Author(s):

S.D. Hersee ◽

M. Baldy ◽

P. Assenat ◽

B. de Cremoux ◽

J.P. Duchemin

Keyword(s):

Laser Structure ◽

Download Full-text

Radiative characteristics of a two-section laser structure based on a δ-doping superlattice

Optics and Spectroscopy ◽

10.1134/1.1563696 ◽

2003 ◽

Vol 94 (3) ◽

pp. 469-475

Author(s):

D. V. Ushakov ◽

V. K. Kononenko ◽

I. S. Manak

Keyword(s):

Laser Structure ◽

Radiative Characteristics

Download Full-text

A skeptic’s review of the New SI

Accreditation and Quality Assurance ◽

10.1007/s00769-010-0738-x ◽

2010 ◽

Vol 16 (3) ◽

pp. 121-132 ◽

Author(s):

Gary Price

Keyword(s):

Download Full-text

Feasibility Of Novel Si-Based Interminiband Lasers

MRS Proceedings ◽

10.1557/proc-533-227 ◽

1998 ◽

Vol 533 ◽

Author(s):

Gregory Sun ◽

Lionel Friedman ◽

Richard A. Soref

Keyword(s):

Quantum Wells ◽

Current Density ◽

Population Inversion ◽

Optical Gain ◽

Laser Structure ◽

Strained Si ◽

Superlattice Structures ◽

AbstractWe have designed a parallel interminiband lasing in superlattice structures of coherently strained Si0.5Ge0.5/Si quantum wells (QWs). Population inversion is achieved between the non-parabolic heavy-hole valence minibands locally in-k-space. Lasing transition is at 5.4μm. Our analysis indicates that an optical gain of 134/cm can be obtained when the laser structure is pumped with a current density of 5kA/cm2.

Download Full-text