Sixth International Conference Metalorganic Vapor Phase Epitaxy
Latest Publications

TOTAL DOCUMENTS

153

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H-INDEX

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Published By IEEE

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Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Complete In Situ Laser Monitoring of HgCdTe/CdTe/ZnTe Growth onto GaAs Substrates

Sixth International Conference Metalorganic Vapor Phase Epitaxy ◽

10.1109/movpe.1992.665006 ◽

2005 ◽

Author(s):

S.J.C. Irvine ◽

J. Bajaj ◽

H.O. Sankur

Keyword(s):

Gaas Substrates ◽

Laser Monitoring

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Selective and Non-Planar Epitaxy of lnP, GalnAs and GalnAsP Using Low Pressure MOCVD

Sixth International Conference Metalorganic Vapor Phase Epitaxy ◽

10.1109/movpe.1992.664963 ◽

2005 ◽

Author(s):

E.J. Thrush ◽

M.A. Gibbon ◽

J.P. Stags ◽

C.G. Cureton ◽

C.J. Jones ◽

...

Keyword(s):

Low Pressure ◽

Low Pressure Mocvd

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The Effect of Growth Temperature Instability in the CBE Growth of ln/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y/lnP Multiple Quantum Well Structures

Sixth International Conference Metalorganic Vapor Phase Epitaxy ◽

10.1109/movpe.1992.665014 ◽

2005 ◽

Author(s):

T.H. Chiu ◽

M.D. Williams ◽

T.K. Woodward ◽

J.E. Zucker ◽

T. Sizer ◽

...

Keyword(s):

Quantum Well ◽

Growth Temperature ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Temperature Instability ◽

Quantum Well Structures

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Chemical Beam Epitaxy of GalnP on GaAs(l 00) Substrates and its Application to 0.98μm Lasers

Sixth International Conference Metalorganic Vapor Phase Epitaxy ◽

10.1109/movpe.1992.665017 ◽

2005 ◽

Author(s):

R.M. Kapre ◽

W.T. Tsang ◽

Y.K. Chen ◽

M.C. Wu ◽

M.A. Chin

Keyword(s):

Chemical Beam Epitaxy

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Uniform Growth of InSb on GaAs in a Rotating Disk Reactor by LPMOVPE

Sixth International Conference Metalorganic Vapor Phase Epitaxy ◽

10.1109/movpe.1992.664985 ◽

2005 ◽

Author(s):

M.A. McKee ◽

B.-S. Yoo ◽

R.A. Stall

Keyword(s):

Rotating Disk ◽

Uniform Growth ◽

Rotating Disk Reactor

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Effect of Substrate Misorientations on the Optical Properties and Doping Characteristics of MOVPE Grown Ga/sub 0.5/In/sub 0.5/P and (Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P

Sixth International Conference Metalorganic Vapor Phase Epitaxy ◽

10.1109/movpe.1992.664979 ◽

2005 ◽

Author(s):

Ming-Jiunn Jou ◽

Jyh-Feng Lin ◽

Chin-Yuan Chen ◽

Biing-Jye Lee

Keyword(s):

Optical Properties

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Growth of lnAsP/lnP Heterostructures by Low-Pressure Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine

Sixth International Conference Metalorganic Vapor Phase Epitaxy ◽

10.1109/movpe.1992.665034 ◽

2005 ◽

Author(s):

C.A. Tran ◽

R.A. Masut ◽

J.L. Brebner ◽

R. Leonelli ◽

P. Cova

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Low Pressure ◽

Metalorganic Chemical

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Characterization of Electrical and Optical Loss MOCVD Regrown in Interfaces Layer lnGaAs-GaAs Quantum Well Heterostructure Lasers

Sixth International Conference Metalorganic Vapor Phase Epitaxy ◽

10.1109/movpe.1992.664969 ◽

2005 ◽

Author(s):

T.M. Coekerill ◽

J. Honig ◽

J.J. Alwan ◽

D.V. Forbes ◽

J.J. Coleman

Keyword(s):

Quantum Well ◽

Optical Loss

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MOVPE Growth of lnSb on GaAs Substrates

Sixth International Conference Metalorganic Vapor Phase Epitaxy ◽

10.1109/movpe.1992.664925 ◽

2005 ◽

Author(s):

R.M. Graham ◽

N.J. Mason ◽

P.J. Walker ◽

R.W. Gedridge

Keyword(s):

Gaas Substrates ◽

Movpe Growth

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Use of the Newly-Developed Triisopropylindium for Omvpe Growth of Inas

Sixth International Conference Metalorganic Vapor Phase Epitaxy ◽

10.1109/movpe.1992.664849 ◽

2005 ◽

Author(s):

C.H. Chen ◽

C.T. Chiu ◽

G.B. Stringfellow ◽

R.W. Gedridge

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Sixth International Conference Metalorganic Vapor Phase EpitaxyLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Complete In Situ Laser Monitoring of HgCdTe/CdTe/ZnTe Growth onto GaAs Substrates

Selective and Non-Planar Epitaxy of lnP, GalnAs and GalnAsP Using Low Pressure MOCVD

The Effect of Growth Temperature Instability in the CBE Growth of ln/sub x/Ga/sub 1-x/As/sub y/P/sub 1-y/lnP Multiple Quantum Well Structures

Chemical Beam Epitaxy of GalnP on GaAs(l 00) Substrates and its Application to 0.98μm Lasers

Uniform Growth of InSb on GaAs in a Rotating Disk Reactor by LPMOVPE

Effect of Substrate Misorientations on the Optical Properties and Doping Characteristics of MOVPE Grown Ga/sub 0.5/In/sub 0.5/P and (Al/sub 0.5/Ga/sub 0.5/)/sub 0.5/In/sub 0.5/P

Growth of lnAsP/lnP Heterostructures by Low-Pressure Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine

Characterization of Electrical and Optical Loss MOCVD Regrown in Interfaces Layer lnGaAs-GaAs Quantum Well Heterostructure Lasers

MOVPE Growth of lnSb on GaAs Substrates

Use of the Newly-Developed Triisopropylindium for Omvpe Growth of Inas

Sixth International Conference Metalorganic Vapor Phase Epitaxy
Latest Publications