Base-collector heterojunction barrier effects at high current densities of Si/SiGe/Si heterojunction bipolar transistors

2002 ◽  
Author(s):  
Jiling Song ◽  
J.S. Yuan
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
High Current ◽  
Barrier Effects ◽  
Current Densities

A Novel GaAs Bipolar Transistor Structure with GaInP-Hole Injection Blocking Barrier

1991 ◽  
Vol 240 ◽  
Author(s):  
W. Pletschen ◽  
K. H. Bachem ◽  
T. Lauterbach
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Gaas Layer ◽  
Bipolar Transistors ◽  
Hole Injection ◽  
Collector Current ◽  
Offset Voltage ◽  
Layer Structures ◽  
Current Densities ◽  
Output Characteristics ◽  
Base Doping

ABSTRACTGaAs bipolar transistors of different emitter types have been fabricated from MOCVD grown lattice matched Ga0.5In0.5 P/GaAs layer structures using carbon for heavy base doping (p=2×1019 cm−3). Besides conventional heterojunction bipolar transistors we also investigated tunneling emitter bipolar transistors having 2 and 5 nm thin GalnP layers between emitter and base, which act as a hole repelling potential barrier in the valence band. Current gains up to 115 have been obtained at collector current densities of 104 A/cm2 even for this heavy base doping. All devices show an almost ideal output characteristics with large Early voltage and small offset voltage. From the temperature dependence of the collector current a small effective conduction band barrier at the heterointerface is determined which hardly affects electron injection into the base.

Sign in / Sign up

Export Citation Format

Share Document