Base-collector junction capacitance of bipolar transistors operating at high current densities

J.J. Liou

doi:10.1109/t-ed.1987.23236

Base-collector junction capacitance of bipolar transistors operating at high current densities

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1987.23236 ◽

1987 ◽

Vol 34 (11) ◽

pp. 2304-2308 ◽

Cited By ~ 30

Author(s):

J.J. Liou

Keyword(s):

Bipolar Transistors ◽

High Current ◽

Junction Capacitance ◽

Collector Junction ◽

Current Densities

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Base-collector heterojunction barrier effects at high current densities of Si/SiGe/Si heterojunction bipolar transistors

Proceedings IEEE Southeastcon '98 'Engineering for a New Era' ◽

10.1109/secon.1998.673317 ◽

2002 ◽

Author(s):

Jiling Song ◽

J.S. Yuan

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

High Current ◽

Barrier Effects ◽

Current Densities

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A compact physical large-signal model for high-speed bipolar transistors at high current densities—Part I: One-dimensional model

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1987.23146 ◽

1987 ◽

Vol 34 (8) ◽

pp. 1741-1751 ◽

Cited By ~ 49

Author(s):

H. Stubing ◽

H.-M. Rein

Keyword(s):

High Speed ◽

Bipolar Transistors ◽

High Current ◽

Dimensional Model ◽

Large Signal ◽

Signal Model ◽

One Dimensional ◽

Current Densities

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The influence of high current densities on the avalanche breakdown characteristics of bipolar transistors†

International Journal of Electronics ◽

10.1080/00207217008900188 ◽

1970 ◽

Vol 29 (1) ◽

pp. 73-81 ◽

Cited By ~ 2

Author(s):

V. A. BROWNE ◽

P. MARS

Keyword(s):

Bipolar Transistors ◽

Avalanche Breakdown ◽

High Current ◽

Current Densities

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Verification of the integral charge-control relation for high-speed bipolar transistors at high current densities

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1985.22076 ◽

1985 ◽

Vol 32 (6) ◽

pp. 1070-1076 ◽

Cited By ~ 24

Author(s):

H.-M. Rein ◽

H. Stubing ◽

M. Schroter

Keyword(s):

High Speed ◽

Bipolar Transistors ◽

High Current ◽

Charge Control ◽

Current Densities ◽

Control Relation

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Comments on "A compact physical large-signal model for high-speed bipolar transistors at high current densities-part I: one-dimensional model" (by H.-M. Rein et al., with reply)

IEEE Transactions on Electron Devices ◽

10.1109/16.7417 ◽

1988 ◽

Vol 35 (11) ◽

pp. 1995-1997

Author(s):

J.J. Liou ◽

H.-M. Rein ◽

M. Schroter ◽

H. Stubing

Keyword(s):

High Speed ◽

Bipolar Transistors ◽

High Current ◽

Dimensional Model ◽

Large Signal ◽

Signal Model ◽

One Dimensional ◽

Current Densities

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Two-dimensional modeling of high-speed bipolar transistors at high current densities using the integral charge-control relation

Physica B+C ◽

10.1016/0378-4363(85)90596-0 ◽

1985 ◽

Vol 129 (1-3) ◽

pp. 332-336 ◽

Cited By ~ 2

Author(s):

M. Schröter ◽

H.-M. Rein

Keyword(s):

High Speed ◽

Bipolar Transistors ◽

Two Dimensional ◽

High Current ◽

Charge Control ◽

Dimensional Modeling ◽

Current Densities ◽

Control Relation

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Improved modeling for transit time and excess phase delay of advanced bipolar transistors at high current densities

Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems. MWSCAS 2001 (Cat. No.01CH37257) ◽

10.1109/mwscas.2001.986319 ◽

2002 ◽

Author(s):

Seonghearn Lee

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Phase Delay ◽

High Current ◽

Current Densities ◽

Excess Phase

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A compact physical large-signal model for high-speed bipolar transistors at high current densities—Part II: Two-dimensional model and experimental results

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1987.23147 ◽

1987 ◽

Vol 34 (8) ◽

pp. 1752-1761 ◽

Cited By ~ 44

Author(s):

H.-M. Rein ◽

M. Schroter

Keyword(s):

High Speed ◽

Bipolar Transistors ◽

Experimental Results ◽

Two Dimensional ◽

High Current ◽

Dimensional Model ◽

Large Signal ◽

Signal Model ◽

Two Dimensional Model ◽

Current Densities

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Optimum collector width of VLSI bipolar transistors for maximum f/sub max/ at high current densities

IEEE Transactions on Electron Devices ◽

10.1109/16.568057 ◽

1997 ◽

Vol 44 (5) ◽

pp. 903-905 ◽

Cited By ~ 1

Author(s):

M.J. Kumar ◽

K. Datta

Keyword(s):

Bipolar Transistors ◽

High Current ◽

Current Densities

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Computer studies on the widening of the avalanche zone and the decrease in efficiency of silicon X-band symmetrical double-drift impatt diodes at high current densities

Electronics Letters ◽

10.1049/el:19780427 ◽

1978 ◽

Vol 14 (19) ◽

pp. 635 ◽

Cited By ~ 14

Author(s):

M. Sridharan ◽

S.K. Roy

Keyword(s):

High Current ◽

X Band ◽

Current Densities ◽

Computer Studies ◽

Impatt Diodes

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