How quantum effects and unintentional doping affect the threshold voltage of narrow-width SOI devices

2005 ◽  
Author(s):  
D. Vasileska ◽  
S.S. Ahmed
Keyword(s):  
Threshold Voltage ◽  
Quantum Effects ◽  
Unintentional Doping ◽  
Narrow Width ◽  
Soi Devices

Modelling of threshold voltage and subthreshold slope of strained-Si MOSFETs including quantum effects

2008 ◽  
Vol 23 (9) ◽  
pp. 095017 ◽  
Author(s):  
Bratati Mukhopadhyay ◽  
Abhijit Biswas ◽  
P K Basu ◽  
G Eneman ◽  
P Verheyen ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Quantum Effects ◽  
Subthreshold Slope ◽  
Strained Si

Analytical model for the threshold voltage of III–V nanowire transistors including quantum effects

2014 ◽  
Vol 92 ◽  
pp. 28-34 ◽  
Author(s):  
E.G. Marin ◽  
F.G. Ruiz ◽  
I.M. Tienda-Luna ◽  
A. Godoy ◽  
F. Gámiz
Keyword(s):  
Analytical Model ◽  
Threshold Voltage ◽  
Quantum Effects ◽  
Nanowire Transistors

Inverse-narrow-width effects and small-geometry MOSFET threshold voltage model

1988 ◽  
Vol 35 (3) ◽  
pp. 325-338 ◽  
Author(s):  
K.K.-L. Hsueh ◽  
J.L. Sanchez ◽  
T.A. Demassa ◽  
L.A. Akers
Keyword(s):  
Threshold Voltage ◽  
Narrow Width ◽  
Threshold Voltage Model
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