Threshold voltage shifts in narrow-width SOI devices due to quantum mechanical size-quantization effects

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(03)00328-x ◽

2003 ◽

Vol 19 (1-2) ◽

pp. 48-52 ◽

Author(s):

Shaikh S Ahmed ◽

Dragica Vasileska

Keyword(s):

Threshold Voltage ◽

Quantum Mechanical ◽

Size Quantization ◽

Narrow Width ◽

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Modeling of narrow-width SOI devices: the impact of quantum mechanical size quantization effects and unintentional doping on device operation

Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC. ◽

10.1109/drc.2004.1367811 ◽

2004 ◽

Author(s):

S.S. Ahmed ◽

D. Vasileska

Keyword(s):

Quantum Mechanical ◽

Size Quantization ◽

Unintentional Doping ◽

Narrow Width ◽

Soi Devices ◽

Device Operation

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Narrow-Width SOI Devices: The Role of Quantum–Mechanical Size Quantization Effect and Unintentional Doping on the Device Operation

IEEE Transactions on Electron Devices ◽

10.1109/ted.2004.842715 ◽

2005 ◽

Vol 52 (2) ◽

pp. 227-236 ◽

Author(s):

D. Vasileska ◽

S.S. Ahmed

Keyword(s):

Quantum Mechanical ◽

Size Quantization ◽

Quantization Effect ◽

Unintentional Doping ◽

Narrow Width ◽

Soi Devices ◽

Device Operation ◽

Size Quantization Effect

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How quantum effects and unintentional doping affect the threshold voltage of narrow-width SOI devices

4th IEEE Conference on Nanotechnology, 2004. ◽

10.1109/nano.2004.1392344 ◽

2005 ◽

Author(s):

D. Vasileska ◽

S.S. Ahmed

Keyword(s):

Threshold Voltage ◽

Quantum Effects ◽

Unintentional Doping ◽

Narrow Width ◽

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Modeling of Narrow-Width SOI Devices: The Role of Quantum Mechanical Narrow Channel Effects on Device Performance

Large-Scale Scientific Computing - Lecture Notes in Computer Science ◽

10.1007/978-3-540-24588-9_10 ◽

2004 ◽

pp. 105-111 ◽

Author(s):

Shaikh S. Ahmed ◽

Dragica Vasileska

Keyword(s):

Narrow Channel ◽

Quantum Mechanical ◽

Device Performance ◽

Channel Effects ◽

Narrow Width ◽

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Narrow-width SOI devices the role of quantum mechanical space-quantization effects on device performance

Proceedings of the 2nd IEEE Conference on Nanotechnology ◽

10.1109/nano.2002.1032238 ◽

2003 ◽

Author(s):

S.S. Ahmed ◽

D. Vasileska

Keyword(s):

Quantum Mechanical ◽

Device Performance ◽

Narrow Width ◽

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Threshold voltage increase by quantum mechanical narrow channel effect in ultra-narrow MOSFETs

International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) ◽

10.1109/iedm.1999.824174 ◽

2003 ◽

Author(s):

H. Majima ◽

H. Ishikuro ◽

T. Hiramoto

Keyword(s):

Threshold Voltage ◽

Narrow Channel ◽

Quantum Mechanical ◽

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Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics ◽

10.1063/1.4737779 ◽

2012 ◽

Vol 112 (2) ◽

pp. 024513 ◽

Author(s):

Aditya Sankar Medury ◽

K. N. Bhat ◽

Navakanta Bhat

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Size Quantization ◽

Effect Transistor ◽

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Comment on "Inverse-narrow-width effects and small-geometry MOSFET threshold voltage model" [with reply]

IEEE Transactions on Electron Devices ◽

10.1109/16.199337 ◽

1993 ◽

Vol 40 (3) ◽

pp. 681-682 ◽

Author(s):

M. Bhatia ◽

R.S. Gupta

Keyword(s):

Threshold Voltage ◽

Narrow Width ◽

Threshold Voltage Model

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Quantum mechanical effect in temperature dependence of threshold voltage of extremely thin SOI MOSFETs

Solid-State Electronics ◽

10.1016/s0038-1101(04)00107-8 ◽

2004 ◽

Author(s):

Y OMURA

Keyword(s):

Temperature Dependence ◽

Threshold Voltage ◽

Mechanical Effect ◽

Quantum Mechanical ◽

Quantum Mechanical Effect

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Two Dimensional Analytical Threshold Voltage Model of Nanoscale Strained Si/Si1–x Gex MOSFETs Including Quantum Mechanical Effects

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2012.2044 ◽

2012 ◽

Vol 9 (3) ◽

pp. 441-447

Author(s):

Kang Eng Siew ◽

Yau Wei Heong ◽

Sohail Anwar ◽

Razali Ismail

Keyword(s):

Threshold Voltage ◽

Quantum Mechanical ◽

Two Dimensional ◽

Strained Si ◽

Mechanical Effects ◽

Quantum Mechanical Effects ◽

Threshold Voltage Model

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