pH sensing and noise characteristics of Si nanowire ion-sensitive field effect transistors

2011 ◽  
Author(s):  
Sungho Kim ◽  
Kihyun Kim ◽  
Taiuk Rim ◽  
Chanhoon Park ◽  
Donghwan Cho ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Ph Sensing ◽  
Si Nanowire ◽  
Noise Characteristics

Fabrication and Characterization of P-implanted Si-nanowire Field-effect Transistors (n-SiNW FETs)

2009 ◽  
Vol 55 (1) ◽  
pp. 28-31 ◽  
Author(s):  
Seung-Yong Lee ◽  
Chan-Oh Jang ◽  
Jung-Hwan Hyung ◽  
Dong-Joo Kim ◽  
Tae-Hong Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Si Nanowire ◽  
Fabrication And Characterization

Photocurrent transient variation in aligned Si nanowire field-effect transistors embedded with Au nanoparticles

2016 ◽  
Vol 109 (10) ◽  
pp. 103508
Author(s):  
Dong Zhang ◽  
Tao Kong ◽  
Miao Wang ◽  
Miao Xiao ◽  
Zhaochun Zhang ◽  
...  
Keyword(s):  
Field Effect ◽  
Au Nanoparticles ◽  
Field Effect Transistors ◽  
Si Nanowire

Erbium Oxide as pH-Sensing Membranes in Extended Gate Field Effect Transistors

2012 ◽  
Vol 17 (1) ◽  
pp. 122-125 ◽  
Author(s):  
Chyuan-Haur Kao ◽  
Hsiang Chen ◽  
Chiao Sung Lai ◽  
Jer Chyi Wang ◽  
Shih Po Lin ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Ph Sensing ◽  
Erbium Oxide

Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors

2018 ◽  
Vol 140 ◽  
pp. 109-114 ◽  
Author(s):  
Jungkyu Jang ◽  
Sungju Choi ◽  
Jungmok Kim ◽  
Tae Jung Park ◽  
Byung-Gook Park ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Ph Sensors ◽  
Si Nanowire ◽  
Rising Time
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