Numerical simulation of CZTS thin film solar cell

Author(s):  
Wenhao Zhao ◽  
Wenli Zhou ◽  
Xiangshui Miao
2014 ◽  
Vol 1638 ◽  
Author(s):  
Hongtao Cui ◽  
Xiaolei Liu ◽  
Xiaojing Hao ◽  
Fangyang Liu ◽  
Ning Song ◽  
...  

ABSTRACTThe focus of this work is on back contact improvement for sputtered CZTS thin film solar cells. Three methods have been investigated including a thin Ag coating, a thin ZnO coating on the Mo back contact and rapid thermal annealing of the back contact. All of these methods have been found to reduce defects such as voids as well as secondary phases at the back contact region and inhibit the formation of MoS2. Consequently all the mothods effectively enhances Voc, Jsc, FF and therefore efficiency significantly.


2020 ◽  
Author(s):  
Meah Imtiaz Zulkarnain ◽  
Nazmul Islam

Abstract In this research, a numerical simulation and analysis of the second generation thin film solar cell Copper Indium Gallium diselenide, Cu(In,Ga)Se2 or, CIGS, is conducted in order to optimize its performance and compare among the cells using different materials for buffer and window layers. The one-dimensional solar cell simulation program SCAPS-1D (Solar Cell Capacitance Simulator) is used for the simulation and analysis purpose. The effects of variation of bandgap, concentration and thickness of the p-type CIGS absorber layer on the efficiency of CIGS solar cell are investigated. The change in CIGS solar cell efficiency with change in temperature is studied, too. Two different buffer layers namely CdS and In2S3 are considered for the simulation of the CIGS solar cell. The thickness of the buffer layer, its bandgap and concentration are taken into consideration for optimization. As for the window layer, ZnO and SnO2 are employed for the numerical simulation. The thickness of the window layer is varied and its effect on the efficiency of the solar cell is investigated. The open-circuit voltage, short-circuit current density, fill factor and quantum efficiency of the CIGS solar cell are observed from the SCAPS simulation besides the solar cell efficiency. A comparison among the different CIGS cell structures employing different buffer layers and window layers is performed in terms of efficiency and other essential parameters as mentioned above. The solar cell performances of the structures explored in this work were also put in comparison against some laboratory research cell output. The simulation result shows a possible better performance for all the simulated CIGS cell structures compared to the experimental results. In2S3 appears to increase efficiency and thus poses a great potential for non-toxic CIGS solar cell. Though CIGS absorber layer requires more thickness for desired output, successful application of much thinner SnO2 replacing ZnO buffer layer paves the way to less thicker CIGS thin film solar cell.


2019 ◽  
Vol 358 ◽  
pp. 762-764 ◽  
Author(s):  
Guang-Xing Liang ◽  
Yan-Di Luo ◽  
Ju-Guang Hu ◽  
Xing-Ye Chen ◽  
Yang Zeng ◽  
...  

2013 ◽  
Vol 712-715 ◽  
pp. 309-312 ◽  
Author(s):  
Ming Kun Xu

P+a-SiC/ I nc-Si/N+a-Si structure solar cells is simulated by AMPS-1D program package to characterize the new thin film solar cell. In order to analyze the characteristics of the device, the thickness of layer are considered. The results show that the thickness of layer and the value of layer have a great effect on the conversion efficiency. Our results suggest a high performance P a-SiC/ I nc-Si/N a-Si structure solar cells with high efficiency of 14.411% and fill factor of 0.738. The simulation result is potentially valuable in exploring gradual bandgap P+a-SiC/I nc-Si/N+a-Si structure solar cells with high performance.


Solar Energy ◽  
2014 ◽  
Vol 100 ◽  
pp. 23-30 ◽  
Author(s):  
Tara P. Dhakal ◽  
Chien–Yi Peng ◽  
R. Reid Tobias ◽  
Ramesh Dasharathy ◽  
Charles R. Westgate

2013 ◽  
Vol 22 (9) ◽  
pp. 098803 ◽  
Author(s):  
Zhen-Hua Huang ◽  
Jian-Jun Zhang ◽  
Jian Ni ◽  
Yu Cao ◽  
Zi-Yang Hu ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document