Prediction and optimization of the performance characteristics of CZTS thin film solar cell using band gap grading

2017 ◽  
Vol 49 (10) ◽  
Author(s):  
Adeyinka D. Adewoyin ◽  
Muteeu A. Olopade ◽  
Michael Chendo
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Band Gap ◽  
Thin Film Solar Cell ◽  
Performance Characteristics ◽  
Czts Thin Film

Improvement of Mo/Cu2ZnSnS4 interface for Cu2ZnSnS4 (CZTS) thin film solar cell application

2014 ◽  
Vol 1638 ◽  
Author(s):  
Hongtao Cui ◽  
Xiaolei Liu ◽  
Xiaojing Hao ◽  
Fangyang Liu ◽  
Ning Song ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Contact Region ◽  
Thin Film Solar Cells ◽  
Czts Thin Film ◽  
Back Contact ◽  
Secondary Phases ◽  
Solar Cell Application

ABSTRACTThe focus of this work is on back contact improvement for sputtered CZTS thin film solar cells. Three methods have been investigated including a thin Ag coating, a thin ZnO coating on the Mo back contact and rapid thermal annealing of the back contact. All of these methods have been found to reduce defects such as voids as well as secondary phases at the back contact region and inhibit the formation of MoS2. Consequently all the mothods effectively enhances Voc, Jsc, FF and therefore efficiency significantly.

Few possible models for 19.9%efficient

2014 ◽  
Vol 6 (1) ◽  
pp. 1058-1065
Author(s):  
Vijaya N Vanakudare ◽  
Rajeev L Deshpande
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Modeling And Simulation ◽  
Band Gap ◽  
Thin Film Solar Cell ◽  
Device Modeling ◽  
Simulation Studies ◽  
Cigs Thin Film ◽  
Graded Band Gap ◽  
Material Saving

: Device modeling and simulation studies of a CIGS thin film solar cell have been carried out using SCAPS 2902. A variety of graded band gap structures of efficiency around 19.9% are examined. The study shows that material saving models with efficiency η around 19.9% is possible

Influence of annealed ITO on PLD CZTS thin film solar cell

2019 ◽  
Vol 358 ◽  
pp. 762-764 ◽  
Author(s):  
Guang-Xing Liang ◽  
Yan-Di Luo ◽  
Ju-Guang Hu ◽  
Xing-Ye Chen ◽  
Yang Zeng ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Czts Thin Film

Characterization of a CZTS thin film solar cell grown by sputtering method

Solar Energy ◽  
2014 ◽  
Vol 100 ◽  
pp. 23-30 ◽  
Author(s):  
Tara P. Dhakal ◽  
Chien–Yi Peng ◽  
R. Reid Tobias ◽  
Ramesh Dasharathy ◽  
Charles R. Westgate
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Czts Thin Film

Ge-alloyed CZTSe thin film solar cell using molecular precursor adopting spray pyrolysis approach

RSC Advances ◽  
2016 ◽  
Vol 6 (44) ◽  
pp. 37621-37627 ◽  
Author(s):  
Dhruba B. Khadka ◽  
SeongYeon Kim ◽  
JunHo Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Band Gap ◽  
Spray Pyrolysis ◽  
Thin Film Solar Cell ◽  
Molecular Precursors ◽  
Molecular Precursor

We report a promising fabrication approach for the synthesis of Ge-alloyed Cu2Zn(GexSn1−x)Se4 (CZGTSe) thin films using molecular precursors by spray pyrolysis to obtain band gap tuned kesterite solar cells.

Band Gap Optimization of CdTeSe Thin-Film Solar Cells

2016 ◽  
Vol 12 (2) ◽  
pp. 4213-4218 ◽  
Author(s):  
Sean Meng ◽  
Yanfa Yan
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Modeling And Simulation ◽  
Band Gap ◽  
Thin Film Solar Cell ◽  
Thin Film Solar Cells ◽  
Device Modeling ◽  
Simulation Studies ◽  
Single Junction ◽  
Graded Band Gap

Device modeling and simulation studies of a CdTeSe thin film solar cell have been carried out. A variety of band-gap profiles, including ungraded, front graded, back graded, and double graded profiles of the CdTeSe absorber layer are examined and their performance characteristics have been analyzed. The calculation reveals that single junction cells with band-gap at the optimum value of 1.38 eV exhibit the maximum performance; alloys of CdTe and CdSe with a ratio of 1:1 forming CdTe0.5Se0.5 achieve the band-gap of 1.38 eV due to the bowing effect. The benefits of the band-gap grading are evaluated when the minimum band-gap is set at the optimum band-gap of 1.38 eV. It is shown that only few graded band-gap profiles exhibit an increase in efficiency, while most of graded profiles reduce performances.

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