A modified charge-control model for HEMTs

Thirteenth National Radio Science Conference. NRSC '96 ◽

10.1109/nrsc.1996.551144 ◽

2002 ◽

Author(s):

M.A. Aziz ◽

M. El-Banna

Keyword(s):

Control Model ◽

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A compact analytical I–V model of AlGaAs/InGaAs/GaAs p-HEMTs based on non-linear charge control model

Microelectronic Engineering ◽

10.1016/j.mee.2004.03.085 ◽

2004 ◽

Vol 75 (2) ◽

pp. 127-136 ◽

Author(s):

K Remashan ◽

K Radhakrishnan

Keyword(s):

Control Model ◽

Linear Charge ◽

Charge Control ◽

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Design calculations for submicron gate-length AlGaAs/GaAs modulation-doped FET structures using carrier saturation velocity/charge-control model

Solid-State Electronics ◽

10.1016/0038-1101(85)90030-9 ◽

1985 ◽

Vol 28 (10) ◽

pp. 997-1005 ◽

Author(s):

Mukunda B. Das ◽

Michael L. Roszak

Keyword(s):

Control Model ◽

Gate Length ◽

Charge Control ◽

Saturation Velocity ◽

Design Calculations

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A new charge-control model for single- and double-heterojunction bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.137308 ◽

1992 ◽

Vol 39 (6) ◽

pp. 1303-1311 ◽

Author(s):

C.D. Parikh ◽

F.A. Lindholm

Keyword(s):

Heterojunction Bipolar Transistors ◽

Control Model ◽

Bipolar Transistors ◽

Charge Control ◽

Double Heterojunction

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Efficient charge control model for pseudomorphic and strained high electron mobility transistors on GaAs and InP substrates

Solid-State Electronics ◽

10.1016/0038-1101(92)90106-m ◽

1992 ◽

Vol 35 (4) ◽

pp. 459-465 ◽

Author(s):

G. Halkias ◽

A. Vegiri ◽

G. Pananakakis ◽

A. Christou

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Control Model ◽

High Electron ◽

High Electron Mobility ◽

Charge Control ◽

Electron Mobility Transistors ◽

Efficient Charge ◽

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An accurate polynomial-based analytical charge control model for AlGaN/GaN HEMT

Semiconductors ◽

10.1134/s1063782611090107 ◽

2011 ◽

Vol 45 (9) ◽

pp. 1205-1210 ◽

Author(s):

Jinrong Pu ◽

Jiuxun Sun ◽

Da Zhang

Keyword(s):

Control Model ◽

Charge Control ◽

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Extended charge-control model for bipolar transistors

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1973.17660 ◽

1973 ◽

Vol 20 (4) ◽

pp. 389-394 ◽

Author(s):

J. te Winkel

Keyword(s):

Control Model ◽

Bipolar Transistors ◽

Charge Control ◽

Extended Charge

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Analytical charge control model for GaAs/AlGaAs-based multiple-quantum-well power hemts

Microwave and Optical Technology Letters ◽

10.1002/(sici)1098-2760(199601)11:1<1::aid-mop1>3.0.co;2-q ◽

1996 ◽

Vol 11 (1) ◽

pp. 1-8 ◽

Author(s):

M. Nawaz ◽

Geir U. Jensen

Keyword(s):

Quantum Well ◽

Multiple Quantum Well ◽

Control Model ◽

Multiple Quantum ◽

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Hot Carrier Effects in the Integral Charge-Control Model for Bipolar Transistors

Bell System Technical Journal ◽

10.1002/j.1538-7305.1972.tb01929.x ◽

1972 ◽

Vol 51 (2) ◽

pp. 455-460 ◽

Author(s):

G. Persky

Keyword(s):

Control Model ◽

Bipolar Transistors ◽

Hot Carrier ◽

Charge Control ◽

Hot Carrier Effects

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A Physics-Based Charge-Control Model for InP DHBT Including Current-Blocking Effect

Chinese Physics Letters ◽

10.1088/0256-307x/26/7/077302 ◽

2009 ◽

Vol 26 (7) ◽

pp. 077302 ◽

Author(s):

Ge Ji ◽

Jin Zhi ◽

Su Yong-Bo ◽

Cheng Wei ◽

Wang Xian-Tai ◽

...

Keyword(s):

Control Model ◽

Blocking Effect ◽

Charge Control ◽

Current Blocking

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A non-linear charge control model for symmetrical pin diodes

Mathematical and Computer Modelling ◽

10.1016/0895-7177(88)90671-1 ◽

1988 ◽

Vol 11 ◽

pp. 1128-1132

Author(s):

J. McGhee ◽

I.A. Henderson ◽

I. Hulley

Keyword(s):

Control Model ◽

Linear Charge ◽

Charge Control ◽

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