A compact analytical I–V model of AlGaAs/InGaAs/GaAs p-HEMTs based on non-linear charge control model

2004 ◽  
Vol 75 (2) ◽  
pp. 127-136 ◽  
Author(s):  
K Remashan ◽  
K Radhakrishnan
1988 ◽  
Vol 11 ◽  
pp. 1128-1132
Author(s):  
J. McGhee ◽  
I.A. Henderson ◽  
I. Hulley

2015 ◽  
Vol 3 (3) ◽  
pp. 1222-1229 ◽  
Author(s):  
Shuai Ma ◽  
Mingwei Shang ◽  
Liyan Yu ◽  
Lifeng Dong

Interconnection between hole-transport material and nanoporous electrode is significant for CsSnI2.95F0.05-based all-solid-state DSCs; hole injection determines its non-linear photovoltaic response.


2020 ◽  
Vol 32 ◽  
pp. 101979
Author(s):  
Per Aaslid ◽  
Frederik Geth ◽  
Magnus Korpås ◽  
Michael M Belsnes ◽  
Olav B Fosso

2000 ◽  
Vol 23 (3) ◽  
pp. 115-129 ◽  
Author(s):  
Pavlo Molchanov ◽  
Arun K. Misra ◽  
Helen Linnik ◽  
Pavlo Mulyar

The simulation principles of monolithic microwave dynamic transistor negatrons (circuits with negative differential active resistance) are introduced. The non-linear model has been developed on the basis of non-linear charge model. The equivalent circuit and Volterra series were used for the calculation of dynamic negatrons' parameters. The expressions were obtained, which give the linear relation between current and voltage charges and allow calculating the transferring characteristics. Experimental oscillators are described, which confirm the theoretical predictions.


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