In addition to improved penetration at high voltage, the characteristics of HVEM images of crystalline materials are changed markedly as a result of many-beam excitation effects. This leads to changes in optimum imaging conditions for dislocations, planar faults, precipitates and other features.Resolution - Because of longer focal lengths and correspondingly larger aberrations, the usual instrument resolution parameter, CS174 λ 374 changes by only a factor of 2 from 100 kV to 1 MV. Since 90% of this change occurs below 500 kV any improvement in “classical” resolution in the MVEM is insignificant. However, as is widely recognized, an improvement in resolution for “thick” specimens (i.e. more than 1000 Å) due to reduced chromatic aberration is very large.
