Bench-marking High Power Switching Performance of $Ga_{2}O_{3}$ SBD with SiC Devices

2020 ◽  
Author(s):  
Kanchan Singh Rana ◽  
Ankush Bag
Keyword(s):  
High Power ◽  
Power Switching ◽  
Switching Performance

High-power switching

1972 ◽  
Vol 18 (4) ◽  
pp. 146
Author(s):  
A.J. Crouchman
Keyword(s):  
High Power ◽  
Power Switching

High-power switching in semiconductors - What is beyond silicon thyristor?

2011 ◽  
Author(s):  
K. Shenai ◽  
P. G. Neudeck ◽  
M. Dudley ◽  
R. F. Davis
Keyword(s):  
High Power ◽  
Power Switching

A novel high power optothyristor based on AlGaAs/GaAs for pulsed power-switching applications

1994 ◽  
Vol 41 (5) ◽  
pp. 819-825 ◽  
Author(s):  
J.H. Zhao ◽  
T. Burke ◽  
M. Weiner ◽  
A. Chin ◽  
J.M. Ballingall
Keyword(s):  
High Power ◽  
Pulsed Power ◽  
Power Switching

GROWTH OF SiC SUBSTRATES

2006 ◽  
Vol 16 (03) ◽  
pp. 751-777 ◽  
Author(s):  
ADRIAN POWELL ◽  
JASON JENNY ◽  
STEPHAN MULLER ◽  
H. McD. HOBGOOD ◽  
VALERI TSVETKOV ◽  
...  
Keyword(s):  
Emerging Markets ◽  
Epitaxial Growth ◽  
High Power ◽  
Significant Fraction ◽  
Current Status ◽  
Microwave Devices ◽  
World Production ◽  
Power Switching ◽  
The World ◽  
The Future

In recent years SiC has metamorphisized from an R&D based materials system to emerge as a key substrate technology for a significant fraction of the world production of green, blue and ultraviolet LEDs. Emerging markets for SiC homoepitaxy include high-power switching devices and microwave devices. Applications for heteroepitaxial GaN-based structures on SiC substrates include lasers and microwave devices. In this paper we review the properties of SiC, assess the current status of substrate and epitaxial growth, and outline our expectations for SiC in the future.

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