3-D determination of the location of non-diamond bound carbon, impurities, and stress components within a single crystal in a CVD diamond film using polarized Micro-Raman spectroscopy

2002 ◽  
Author(s):  
J. Mossbrucker ◽  
B. Wright ◽  
J. Asmussen
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystal ◽  
Diamond Film ◽  
Cvd Diamond ◽  
Micro Raman Spectroscopy ◽  
Carbon Impurities ◽  
Stress Components ◽  
Cvd Diamond Film

Growth and characterization of single crystal CVD diamond film based nuclear detectors

2006 ◽  
Vol 15 (2-3) ◽  
pp. 292-295 ◽  
Author(s):  
A. Balducci ◽  
Marco Marinelli ◽  
E. Milani ◽  
M.E. Morgada ◽  
G. Pucella ◽  
...  
Keyword(s):  
Single Crystal ◽  
Diamond Film ◽  
Cvd Diamond ◽  
Cvd Diamond Film ◽  
Nuclear Detectors

C, Si and Sn Implantation of CVD Diamond as a means of Enhancing Subsequent Etch Rate

2004 ◽  
Vol 843 ◽  
Author(s):  
P. W. Leech ◽  
T. Perova ◽  
R. A. Moore ◽  
G. K. Reeves ◽  
A. S. Holland ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Diamond Film ◽  
Etch Rate ◽  
Vacancy Concentration ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Implantation Dose ◽  
Micro Raman Spectroscopy ◽  
Uniform Region

ABSTRACTDiamond films were implanted with C+, Si+ or Sn+ ions at multiple energies in order to generate a uniform region of implantation-induced disorder. Analysis of the C+ implanted surfaces by micro-Raman spectroscopy has shown only minor increase in the proportion of nondiamond or sp2-bonded carbon at doses of 5 × 1013 - 5 × 1015 ions/cm2. In comparison, an amorphization of the structure was evident after implantation with either Si+ ions at a dose of 5 × 1015 ions/cm2 or with Sn+ ions at >5 × 1014 ions/cm2. At a given implantation dose, the etch rate of the diamond film in a CF4/O2 plasma increased with the mass of the implanted species in the order of C+, Si+ and Sn+. For a given implant species, the etch rate was directly proportional to vacancy concentration as controlled by the dose or the implantation-induced disorder.

Secondary electron amplification using single-crystal CVD diamond film

2011 ◽  
Vol 20 (5-6) ◽  
pp. 798-802 ◽  
Author(s):  
J.E. Yater ◽  
J.L. Shaw ◽  
K.L. Jensen ◽  
T. Feygelson ◽  
R.E. Myers ◽  
...  
Keyword(s):  
Single Crystal ◽  
Diamond Film ◽  
Secondary Electron ◽  
Cvd Diamond ◽  
Cvd Diamond Film

Local strain evaluation of single crystal Si pillar by micro Raman spectroscopy and photoluminescence

2008 ◽  
Vol 517 (1) ◽  
pp. 31-33 ◽  
Author(s):  
Dong Wang ◽  
Hiroshi Nakashima ◽  
Masanori Tanaka ◽  
Taizoh Sadoh ◽  
Masanobu Miyao ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystal ◽  
Local Strain ◽  
Micro Raman Spectroscopy

Interface Temperature Measurement and Experimental Studies of Super-High Speed Polishing of CVD Diamond Films

2010 ◽  
Vol 135 ◽  
pp. 271-276
Author(s):  
Shu Tao Huang ◽  
Li Zhou ◽  
Li Fu Xu
Keyword(s):  
Stainless Steel ◽  
Temperature Measurement ◽  
Temperature Rise ◽  
Diamond Film ◽  
High Speed ◽  
Experimental Studies ◽  
Pure Titanium ◽  
Cvd Diamond ◽  
Interface Temperature ◽  
Cvd Diamond Film

Super-high speed polishing of diamond film is a newly proposed method due to its outstanding features such as low cost and simple apparatus. The interface temperature rise is due to the friction force and the relative sliding velocity between the CVD diamond film and the polishing metal plate surface. In this paper, the interface temperature rise in super-high speed polishing of CVD diamond film was investigated by using the single-point temperature measurement method. Additionally, the influence of polishing plate material on the characteristics of super-high speed polishing has been studied. The results showed that cast iron is not suitable for super-high polishing, while both 0Cr18Ni9 stainless steel and pure titanium can be used for the super-high polishing of CVD diamond film. The quality and efficiency of polishing with 0Cr18Ni9 stainless steel plate is much higher than those of pure titanium, and the material removal rate could reach to 36-51 m/h when the polishing speed and pressure are 100 m/s and 0.17-0.31 MPa, respectively.

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