C, Si and Sn Implantation of CVD Diamond as a means of Enhancing Subsequent Etch Rate

ABSTRACTDiamond films were implanted with C+, Si+ or Sn+ ions at multiple energies in order to generate a uniform region of implantation-induced disorder. Analysis of the C+ implanted surfaces by micro-Raman spectroscopy has shown only minor increase in the proportion of nondiamond or sp2-bonded carbon at doses of 5 × 1013 - 5 × 1015 ions/cm2. In comparison, an amorphization of the structure was evident after implantation with either Si+ ions at a dose of 5 × 1015 ions/cm2 or with Sn+ ions at >5 × 1014 ions/cm2. At a given implantation dose, the etch rate of the diamond film in a CF4/O2 plasma increased with the mass of the implanted species in the order of C+, Si+ and Sn+. For a given implant species, the etch rate was directly proportional to vacancy concentration as controlled by the dose or the implantation-induced disorder.

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Ion Beam Etching of CVD Diamond Enhanced by Prior Au and O Implantation.

MRS Proceedings ◽

10.1557/proc-750-y5.36 ◽

2002 ◽

Vol 750 ◽

Author(s):

Patrick W. Leech ◽

Geoffrey K. Reeves ◽

Anthony S. Holland ◽

Mark C. Ridgway

Keyword(s):

Raman Spectroscopy ◽

Chemical Etching ◽

Etch Rate ◽

Ion Beam ◽

Diamond Films ◽

Cvd Diamond ◽

Similar Increase ◽

Ion Beam Etching ◽

Uniform Region ◽

Ar Gas

ABSTRACTDiamond films were implanted with Au or O ions at multiple energies in order to produce a uniform region of C vacancies. Analysis of the implanted films by Raman spectroscopy has shown that the proportion of non-diamond or amorphous carbon increased with dose (5 × 1013 − 5 × 1015 ions/cm2). For implantation with Au ions, a complete amorphisation near to the surface was evident at a dose of 5 × 1015 ions/cm2. We have examined the ion beam etch (IBE) rate of the films as a function of the implant species and dose. The etching experiments were performed using either Ar or Ar/O2 gases at a bias energy of 500 -1,000 eV. In Ar gas, the process of sputter etching has produced a similar increase in etch rate with dose for both the Au and O implants. In Ar/ O2 gases, the process of ion-enhanced chemical etching produced greater etch rates than obtained in Ar gas with higher rates for the Au than the O implants.

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Analysis of intrinsic stress distribution in grains of high quality CVD diamond film by micro-Raman spectroscopy

Thin Solid Films ◽

10.1016/s0040-6090(97)00427-6 ◽

1997 ◽

Vol 308-309 ◽

pp. 168-172 ◽

Cited By ~ 11

Author(s):

I.I Vlasov ◽

V.G Ralchenko ◽

E.D Obraztsova ◽

A.A Smolin ◽

V.I Konov

Keyword(s):

Raman Spectroscopy ◽

Stress Distribution ◽

Diamond Film ◽

Cvd Diamond ◽

Intrinsic Stress ◽

High Quality ◽

Micro Raman Spectroscopy ◽

Cvd Diamond Film

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3-D determination of the location of non-diamond bound carbon, impurities, and stress components within a single crystal in a CVD diamond film using polarized Micro-Raman spectroscopy

25th Anniversary, IEEE Conference Record - Abstracts. 1998 IEEE International Conference on Plasma Science (Cat. No.98CH36221) ◽

10.1109/plasma.1998.677545 ◽

2002 ◽

Author(s):

J. Mossbrucker ◽

B. Wright ◽

J. Asmussen

Keyword(s):

Raman Spectroscopy ◽

Single Crystal ◽

Diamond Film ◽

Cvd Diamond ◽

Micro Raman Spectroscopy ◽

Carbon Impurities ◽

Stress Components ◽

Cvd Diamond Film

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Infrared Characterization of the Hydrogen Environments in Diamond Thin Films

MRS Proceedings ◽

10.1557/proc-162-267 ◽

1989 ◽

Vol 162 ◽

Author(s):

Y. M. LeGrice ◽

E. C. Buehler ◽

R. J. Nemanich ◽

J. T. Glass ◽

K. Kobashi ◽

...

Keyword(s):

Raman Spectroscopy ◽

General Trend ◽

Growth Parameters ◽

Broad Band ◽

Diamond Films ◽

Cvd Diamond ◽

Ir Absorption ◽

Sharp Transition ◽

Ir And Raman

ABSTRACTCVD diamond films prepared under varying conditions have been investigated with IR and Raman spectroscopy. Raman spectroscopy was used to characterize the crystal structure, and ir absorption was used to determine the H bonding environments. The growth temperatures were varied in one series, while the CH4/H2 ratio was varied in another. The IR absorption of all the samples showed a weak broad band extending from approximately 2800 to 2970 cm−1 which was attributed to H bonded to sp3 C sites. There was no evidence of ir absorption at 3000 to 3200 cm−1 which would indicate H bonded to sp2 or sp1 C sites. For both series, the Raman measurements showed progression from diamond-like films to diamond films. The ir absorption showed a general trend of less H with more well ordered diamond structures. No sharp transition of the H incorporation vs the growth parameters was observed.

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Investigation of the boron incorporation in polycrystalline CVD diamond films by TEM, EELS and Raman spectroscopy

Diamond and Related Materials ◽

10.1016/s0925-9635(96)00668-1 ◽

1997 ◽

Vol 6 (5-7) ◽

pp. 763-768 ◽

Cited By ~ 56

Author(s):

P. Wurzinger ◽

P. Pongratz ◽

P. Hartmann ◽

R. Haubner ◽

B. Lux

Keyword(s):

Raman Spectroscopy ◽

Diamond Films ◽

Cvd Diamond

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Structural analysis of a diamond film grown on a photoelectrochemically etched silicon substrate by micro-Raman spectroscopy

Journal of Electroanalytical Chemistry ◽

10.1016/0022-0728(95)04316-6 ◽

1995 ◽

Vol 397 (1-2) ◽

pp. 339-341 ◽

Cited By ~ 4

Author(s):

Kazuhito Hashimoto ◽

Yusuke Muraki ◽

Ryo Baba ◽

Akira Fujishima

Keyword(s):

Raman Spectroscopy ◽

Structural Analysis ◽

Diamond Film ◽

Silicon Substrate ◽

Micro Raman Spectroscopy ◽

Etched Silicon

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785 nm Raman Spectroscopy of CVD Diamond Films

MRS Proceedings ◽

10.1557/proc-1039-p15-02 ◽

2007 ◽

Vol 1039 ◽

Cited By ~ 1

Author(s):

Paul William May ◽

James A Smith ◽

Keith N Rosser

Keyword(s):

Raman Spectroscopy ◽

Film Thickness ◽

Raman Spectra ◽

Relative Intensity ◽

Near Infrared ◽

Diamond Films ◽

Polycrystalline Diamond ◽

Cvd Diamond ◽

Raman Study ◽

Thin Polycrystalline

AbstractRaman spectroscopy is a powerful technique often used to study CVD diamond films, however, very little work has been reported for the Raman study of CVD diamond films using near infrared (785 nm) excitation. Here, we report that when using 785 nm excitation, the Raman spectra from thin polycrystalline diamond films exhibit a multitude of peaks (over 30) ranging from 400-3000 cm−1. These features are too sharp to be photoluminescence, and are a function of film thickness. For films >30 μm thick, freestanding films, and for films grown in diamond substrates the Raman peaks disappear, suggesting that the laser is probing the disordered small-grained interface between the diamond and substrate. Some of the peaks change in relative intensity with time (‘blinking’), and the spectra are very sensitive to position on the substrate – this is reminiscent of the behaviour seen in SERS spectra.

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CVD Diamond Films Growth on Silicon Nitride Inserts (Si3N4) with High Nucleation Density by Functionalization Seeding

Materials Science Forum ◽

10.4028/www.scientific.net/msf.727-728.1433 ◽

2012 ◽

Vol 727-728 ◽

pp. 1433-1438 ◽

Cited By ~ 7

Author(s):

R.A. Campos ◽

A. Contin ◽

Vladimir J. Trava-Airoldi ◽

J.R. Moro ◽

D.M. Barquete ◽

...

Keyword(s):

Silicon Nitride ◽

Diamond Film ◽

Cutting Tools ◽

Diamond Films ◽

Base Material ◽

Cvd Diamond ◽

Nucleation Density ◽

Force Microscopy ◽

Low Thermal Expansion ◽

Hot Filament

Silicon Nitride is largely used as the base material to manufacture cutting tools. Due to its low thermal expansion coefficient it is ideal candidate for CVD diamond deposition. In this work, we functionalized the surface of silicon nitride inserts (Si3N4) with a polymer (PDDA Poly (diallyldimethylamonium chloride - Mw 40000)) to promote seeding with nanodiamond particles. The seeding was performed in water slurry containing 4 nm diamond particles dispersed by PSS Poly (sodium4-styrenesulfonate) polymer. CVD diamond films, with high nucleation density, were deposited in a hot filament reactor. Film morphology was characterized by Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). Diamond film quality was determined by Raman Spectroscopy. CVD diamond film adherence was evaluated using Rockwell C indentation.

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