Development of the microwave plasma CVD technique for rapid growth of large single-crystal diamond

Recent developments in producing large single crystal CVD diamond plates are reviewed. The developments consist of synthesis of large single crystal diamond and production of single crystal diamond plates from the bulk diamond by the lift-off process. Combining these developments, half-inch single crystal CVD diamond plates have been successfully produced.

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Synthesizing single-crystal diamond by repetition of high rate homoepitaxial growth by microwave plasma CVD

Diamond and Related Materials ◽

10.1016/j.diamond.2005.09.020 ◽

2005 ◽

Vol 14 (11-12) ◽

pp. 1743-1746 ◽

Cited By ~ 78

Author(s):

Y. Mokuno ◽

A. Chayahara ◽

Y. Soda ◽

Y. Horino ◽

N. Fujimori

Keyword(s):

Single Crystal ◽

Microwave Plasma ◽

High Rate ◽

Plasma Cvd ◽

Homoepitaxial Growth ◽

Single Crystal Diamond ◽

Microwave Plasma Cvd

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Epitaxial Growth of Diamond by In-Liquid Plasma CVD Method

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.749.211 ◽

2017 ◽

Vol 749 ◽

pp. 211-216

Author(s):

Pria Gautama ◽

Hiromichi Toyota ◽

Xia Zhu ◽

Yukiharu Iwamoto ◽

Shinfuku Nomura ◽

...

Keyword(s):

Single Crystal ◽

Epitaxial Growth ◽

Diamond Film ◽

High Speed ◽

Microwave Plasma ◽

Plasma Cvd ◽

Tungsten Electrode ◽

Experimental Conditions ◽

Single Crystal Diamond ◽

Microwave Plasma Cvd

Currently, novel method to synthesize diamond film on material substrate called as in-liquid microwave plasma CVD (IL-MPCVD) has been achieved. It has been studied and improved in addition expected as new method instead of conventional gas phase microwave plasma CVD (MPCVD). The purpose of this study is to synthesize single crystal diamond using IL-MPCVD in high speed deposition. The experimental conditions, methanol was poured in to the reactor. Each of diamond particles (100) and (111) was embedded on the stainless steel substrates (SUS632J2). It was mounted to the substrate holder of in-liquid plasma equipment and installed on the top cover. The distance between the tip of the electrode and the substrate was kept to 1.5mm. A microwave of 2.45GHz was irradiated into the quartz glass tube reactor from the rectangular cavity resonator with 4 mm diameter tungsten electrode and the plasma was generated at its tip. The microwave was adjusted in appropriate power to maintain a certain substrate temperature. Diamond films were evaluated by Raman spectroscopy, Scanning Electron Microscope (SEM) and Laser Microscope (LM). As a result, the best orientation for epitaxial growth was found to be (100) which have film growth gradually and smooth surface. Whereas (111) face has polycrystalline film with irregularity growth and rough surface. The remaining H and C after CO synthesis satisfying H/C>20 is necessary to synthesized diamond using IL-MPCVD. The deposition rate was about 32 μm/h when both single crystal and polycrystalline diamond film were synthesized.

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