Experimental realization of floating-gate-memory thin-film transistor

1975 ◽  
Vol 63 (5) ◽  
pp. 826-827 ◽  
Author(s):  
K.K. Yu ◽  
T.P. Brody ◽  
P.C.Y. Chen
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Floating Gate ◽  
Experimental Realization ◽  
Floating Gate Memory

Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles

2010 ◽  
Vol 12 (12) ◽  
pp. 1966-1969 ◽  
Author(s):  
Byoungjun Park ◽  
Kyoungah Cho ◽  
Sungsu Kim ◽  
Sangsig Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Floating Gate ◽  
Zno Thin Film ◽  
Al Nanoparticles ◽  
Floating Gate Memory

Memory Devices Based on the Nanoparticle Silicon Floating Gate Double-Barrier Structure

2013 ◽  
Vol 773 ◽  
pp. 664-667
Author(s):  
Zhao Jun Guo ◽  
Li Qiang Guo ◽  
Guo Dong Wu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Chemical Vapor ◽  
Charge Carrier Mobility ◽  
Floating Gate ◽  
Memory Devices ◽  
Double Barrier ◽  
Floating Gate Memory ◽  
High Charge Carrier Mobility

Thin film transistors with nanoparticles silicon floating-gate are fabricated by plasma enhanced chemical vapor deposition. It should be noted that SiO2acts as both a tunneling and a blocking layer. Meanwhile, some np-Si dots are embedded within SiO2layers. The electrical characteristic of the devices are measured by semiconductor parameter analyzer at room temperature. These Thin film transistors show a good device performance with a high charge-carrier mobility of 33 cm2/vs and a large on/off ratio of 1.2×106. Moreover, the capability of written and erasing was demonstrated. This indicates that thin film transistors can be operated as rewritable nonvolatile floating gate memory devices.

A poly-Si thin-film transistor EEPROM cell with a folded floating gate

1999 ◽  
Vol 46 (2) ◽  
pp. 436-438 ◽  
Author(s):  
Sung-Hoi Hur ◽  
Nae-In Lee ◽  
Jin-Woo Lee ◽  
Chul-Hi Han
Keyword(s):  
Thin Film ◽  
Thin Film Transistor ◽  
Floating Gate ◽  
Si Thin Film
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