Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles

2010 ◽  
Vol 12 (12) ◽  
pp. 1966-1969 ◽  
Author(s):  
Byoungjun Park ◽  
Kyoungah Cho ◽  
Sungsu Kim ◽  
Sangsig Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Floating Gate ◽  
Zno Thin Film ◽  
Al Nanoparticles ◽  
Floating Gate Memory

Memory Devices Based on the Nanoparticle Silicon Floating Gate Double-Barrier Structure

2013 ◽  
Vol 773 ◽  
pp. 664-667
Author(s):  
Zhao Jun Guo ◽  
Li Qiang Guo ◽  
Guo Dong Wu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Chemical Vapor ◽  
Charge Carrier Mobility ◽  
Floating Gate ◽  
Memory Devices ◽  
Double Barrier ◽  
Floating Gate Memory ◽  
High Charge Carrier Mobility

Thin film transistors with nanoparticles silicon floating-gate are fabricated by plasma enhanced chemical vapor deposition. It should be noted that SiO2acts as both a tunneling and a blocking layer. Meanwhile, some np-Si dots are embedded within SiO2layers. The electrical characteristic of the devices are measured by semiconductor parameter analyzer at room temperature. These Thin film transistors show a good device performance with a high charge-carrier mobility of 33 cm2/vs and a large on/off ratio of 1.2×106. Moreover, the capability of written and erasing was demonstrated. This indicates that thin film transistors can be operated as rewritable nonvolatile floating gate memory devices.

Highly stable solution-processed ZnO thin film transistors prepared via a simple Al evaporation process

2014 ◽  
Vol 2 (8) ◽  
pp. 1390-1395 ◽  
Author(s):  
Tae Sung Kang ◽  
Tae Yoon Kim ◽  
Gyu Min Lee ◽  
Hyun Chul Sohn ◽  
Jin Pyo Hong
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Stable Solution ◽  
Zno Thin Film ◽  
Evaporation Process ◽  
Zno Film ◽  
Solution Processed ◽  
Impregnation Process ◽  
Al Nanoparticles ◽  
Device Stability

The possible nature of the improved device stability is proposed by employing the formation of Al nanoparticles (NPs) on the back channel of a ZnO film and a partial Al atom (ion) impregnation process.

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

2014 ◽  
Vol 35 (12) ◽  
pp. 1266-1268 ◽  
Author(s):  
Yang Geng ◽  
Wen Yang ◽  
Hong-Liang Lu ◽  
Yuan Zhang ◽  
Qing-Qing Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Post Annealing

Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors

2012 ◽  
Vol 29 (1) ◽  
pp. 018501 ◽  
Author(s):  
Shao-Juan Li ◽  
Xin He ◽  
De-Dong Han ◽  
Lei Sun ◽  
Yi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Zno Thin Film
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