scholarly journals Nano-Floating Gate Memory Devices Composed of ZnO Thin-Film Transistors on Flexible Plastics

2010 ◽  
Author(s):  
Byoungjun Park ◽  
Kyoungah Cho ◽  
Sungsu Kim ◽  
Sangsig Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Floating Gate ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Floating Gate Memory

Nano-floating gate memory based on ZnO thin-film transistors and Al nanoparticles

2010 ◽  
Vol 12 (12) ◽  
pp. 1966-1969 ◽  
Author(s):  
Byoungjun Park ◽  
Kyoungah Cho ◽  
Sungsu Kim ◽  
Sangsig Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Floating Gate ◽  
Zno Thin Film ◽  
Al Nanoparticles ◽  
Floating Gate Memory

Memory Devices Based on the Nanoparticle Silicon Floating Gate Double-Barrier Structure

2013 ◽  
Vol 773 ◽  
pp. 664-667
Author(s):  
Zhao Jun Guo ◽  
Li Qiang Guo ◽  
Guo Dong Wu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Chemical Vapor ◽  
Charge Carrier Mobility ◽  
Floating Gate ◽  
Memory Devices ◽  
Double Barrier ◽  
Floating Gate Memory ◽  
High Charge Carrier Mobility

Thin film transistors with nanoparticles silicon floating-gate are fabricated by plasma enhanced chemical vapor deposition. It should be noted that SiO2acts as both a tunneling and a blocking layer. Meanwhile, some np-Si dots are embedded within SiO2layers. The electrical characteristic of the devices are measured by semiconductor parameter analyzer at room temperature. These Thin film transistors show a good device performance with a high charge-carrier mobility of 33 cm2/vs and a large on/off ratio of 1.2×106. Moreover, the capability of written and erasing was demonstrated. This indicates that thin film transistors can be operated as rewritable nonvolatile floating gate memory devices.

scholarly journals Nonvolatile memory devices based on undoped and Hf- and NaF-doped ZnO thin film transistors with Ag nanowires inserted between ZnO and gate insulator interface

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27699-27706 ◽  
Author(s):  
Manoj Kumar ◽  
Hakyung Jeong ◽  
Dongjin Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Gate Insulator ◽  
Memory Devices ◽  
Zno Thin Film ◽  
Insulator Interface ◽  
Ag Nanowires ◽  
Nonvolatile Memory Devices

Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.

Mobility Enhancement and OFF Current Suppression in Atomic-Layer-Deposited ZnO Thin-Film Transistors by Post Annealing in O2

2014 ◽  
Vol 35 (12) ◽  
pp. 1266-1268 ◽  
Author(s):  
Yang Geng ◽  
Wen Yang ◽  
Hong-Liang Lu ◽  
Yuan Zhang ◽  
Qing-Qing Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Post Annealing

Reactive Radiofrequency Sputtering-Deposited Nanocrystalline ZnO Thin-Film Transistors

2012 ◽  
Vol 29 (1) ◽  
pp. 018501 ◽  
Author(s):  
Shao-Juan Li ◽  
Xin He ◽  
De-Dong Han ◽  
Lei Sun ◽  
Yi Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Zno Thin Film
Sign in / Sign up

Export Citation Format

Share Document