Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

2014 ◽  
Vol 104 (1) ◽  
pp. 013302 ◽  
Author(s):  
Jinhua Han ◽  
Wei Wang ◽  
Jun Ying ◽  
Wenfa Xie
Keyword(s):  
Thin Film ◽  
Nonvolatile Memory ◽  
Thin Film Transistor ◽  
Floating Gate ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

The Effect of Post-Annealing Temperature on the Performance of OTFT Memory

2015 ◽  
Vol 748 ◽  
pp. 141-145
Author(s):  
Li Juan Liang ◽  
Yukimoto Tomoyashi ◽  
Xian Fu Wei
Keyword(s):  
Thin Film ◽  
Nonvolatile Memory ◽  
Elevated Temperatures ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Memory Device ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Post Annealing ◽  
Electronic Performance

A nonvolatile memory based on an organic thin-film transistor (OTFT) with biopolymer of DNA-OTMA as the gate dielectric is fabricated. The device prepared by DNA-OTMA show a very large and metastable hysteresis in the transfer characteristics. In order to obtain the organic thin film transistor memory device with high electronic performance, one of the most widely used method such as post annealing have been applied to improve the quality of gate dielectric layer. In conclusion, the post-annealing at elevated temperatures plays a very important role in the performance of the OTFT memory device.

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