Optimum band gap for amorphous silicon based solar cells

ABSTRACTGenerally higher depositions temperatures are required to prepare solar cells with narrow band gap amorphous silicon intrinsic layers. High processing temperatures require that diffusion resistant substrates and doped layer materials be developed. In the case of p-i-n solar cells both a new Ga-doped ZnO and/or semi-transparent Cr over-coated standard commercially available TCO show increased resistance to high temperature processing and it is possible to prepare efficient solar cells on these substrates at temperatures over 280 C. In most amorphous silicon i-layer cases a-SiC:H p-layers offer better diffusion resistance than microcrystalline players. However, in the case of narrow band gap amorphous silicon prepared at high temperatures using the argon treatment process [2] micro-crystalline p-layers offer significantly improved solar cell performance. Another promising approach involves the n-i-p deposition sequence, however, this case too can suffer from diffusion related problems.

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Research on high-band-gap materials and amorphous-silicon-based solar cells. Annual subcontract report, May 15, 1994--May 14, 1995

10.2172/176787 ◽

1995 ◽

Author(s):

E.A. Schiff ◽

Q. Gu ◽

L. Jiang ◽

Q. Wang

Keyword(s):

Solar Cells ◽

Amorphous Silicon ◽

Band Gap ◽

Silicon Based ◽

High Band

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Production technology for amorphous silicon-based flexible solar cells

Solar Energy Materials and Solar Cells ◽

10.1016/s0927-0248(00)00163-x ◽

2001 ◽

Vol 66 (1-4) ◽

pp. 107-115 ◽

Cited By ~ 79

Author(s):

Yukimi Ichikawa ◽

Takashi Yoshida ◽

Toshio Hama ◽

Hiroshi Sakai ◽

Kouichi Harashima

Keyword(s):

Solar Cells ◽

Amorphous Silicon ◽

Production Technology ◽

Silicon Based

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Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

International Journal of Photoenergy ◽

10.1155/2021/7506837 ◽

2021 ◽

Vol 2021 ◽

pp. 1-13

Author(s):

F. X. Abomo Abega ◽

A. Teyou Ngoupo ◽

J. M. B. Ndjaka

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Amorphous Silicon ◽

Buffer Layer ◽

Defect Density ◽

Hydrogenated Amorphous Silicon ◽

Theoretical Work ◽

Silicon Based ◽

The Impact ◽

Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13 cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95 mA · c m − 2 , V OC = 0.973 V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

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Silicon Heterojunction Solar Cells with p-Type Silicon Carbon Window Layer

Crystals ◽

10.3390/cryst9080402 ◽

2019 ◽

Vol 9 (8) ◽

pp. 402 ◽

Cited By ~ 2

Author(s):

Chia-Hsun Hsu ◽

Xiao-Ying Zhang ◽

Ming Jie Zhao ◽

Hai-Jun Lin ◽

Wen-Zhang Zhu ◽

...

Keyword(s):

Solar Cells ◽

Amorphous Silicon ◽

Band Gap ◽

Flow Rate ◽

Computer Aided Design ◽

Hydrogenated Amorphous Silicon ◽

Wavelength Region ◽

Window Layer ◽

Solar Cell Performance ◽

Hydrogenated Amorphous

Boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films are deposited using high frequency 27.12 MHz plasma enhanced chemical vapor deposition system as a window layer of silicon heterojunction (SHJ) solar cells. The CH4 gas flow rate is varied to deposit various a-SiC:H films, and the optical and electrical properties are investigated. The experimental results show that at the CH4 flow rate of 40 sccm the a-SiC:H has a high band gap of 2.1 eV and reduced absorption coefficients in the whole wavelength region, but the electrical conductivity deteriorates. The technology computer aided design simulation for SHJ devices reveal the band discontinuity at i/p interface when the a-SiC:H films are used. For fabricated SHJ solar cell performance, the highest conversion efficiency of 22.14%, which is 0.33% abs higher than that of conventional hydrogenated amorphous silicon window layer, can be obtained when the intermediate band gap (2 eV) a-SiC:H window layer is used.

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