Hydrogenated amorphous silicon–germanium thin films with a narrow band gap for silicon-based solar cells

2011 ◽  
Vol 11 (1) ◽  
pp. S50-S53 ◽  
Author(s):  
Chao-Chun Wang ◽  
Chueh-Yang Liu ◽  
Shui-Yang Lien ◽  
Ko-Wei Weng ◽  
Jung-Jie Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Germanium ◽  
Narrow Band ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Based ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon germanium by Hot Wire CVD as an alternative for microcrystalline silicon in tandem and triple junction solar cells

2014 ◽  
Vol 1666 ◽  
Author(s):  
L.W. Veldhuizen ◽  
Y. Kuang ◽  
N.J. Bakker ◽  
C.H.M. van der Werf ◽  
S.-J. Yun ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Germanium ◽  
Short Circuit ◽  
Hydrogenated Amorphous Silicon ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

ABSTRACTWe study hydrogenated amorphous silicon germanium (a-SiGe:H) deposited by HWCVD for the use as low band gap absorber in multijunction junction solar cells. We deposited layers with Tauc optical band gaps of 1.21 to 1.56 eV and studied the hydrogen bonding with FTIR for layers that were deposited at several reaction pressures. For our reaction conditions, we found an optimal reaction pressure of 38 µbar. The material that is obtained under these conditions does not meet all device quality requirements for a-SiGe:H, which is, as we hypothesize, caused by the presence of He that is used to dilute the GeH4 source gas. We present an initial single junction n-i-p solar cell with a Tauc optical band gap of 1.45 eV and a short circuit current density of 18.7 mA/cm2.

Effect of Ge Incorporation on Hydrogenated Amorphous Silicon Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition

2012 ◽  
Vol 569 ◽  
pp. 27-30
Author(s):  
Bao Jun Yan ◽  
Lei Zhao ◽  
Ben Ding Zhao ◽  
Jing Wei Chen ◽  
Hong Wei Diao ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon germanium thin films (a-SiGe:H) were prepared via plasma enhanced chemical vapor deposition (PECVD). By adjusting the flow rate of GeH4, a-SiGe:H thin films with narrow bandgap (Eg) were fabricated with high Ge incorporation. It was found that although narrow Eg was obtained, high Ge incorporation resulted in a great reduction of the thin film photosensitivity. This degradation was attributed to the increase of polysilane-(SiH2)n, which indicated a loose and disordered microstructure, in the films by systematically investigating the optical, optoelectronic and microstructure properties of the prepared a-SiGe:H thin films via transmission, photo/dark conductivity, Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR) measurements. Such investigation provided a helpful guide for further preparing narrow Eg a-SiGe:H materials with good optoelectronic properties.

Sign in / Sign up

Export Citation Format

Share Document