Near-field optical beam induced current (NOBIC) characteristics of a GaAs solar cell with biomimetic antireflective structures

2011 ◽  
Author(s):  
ChengYing Yang ◽  
M. A. Tsai ◽  
Peichen Yu
Keyword(s):  
Solar Cell ◽  
Near Field ◽  
Optical Beam ◽  
Induced Current ◽  
Optical Beam Induced Current

Near-field optical-beam-induced current spectroscopy as a tool for analyzing aging processes in diode lasers

1997 ◽  
Author(s):  
Jens W. Tomm ◽  
Alexander Richter ◽  
Christoph Lienau ◽  
Thomas Elsaesser ◽  
Johann Luft
Keyword(s):  
Diode Lasers ◽  
Near Field ◽  
Optical Beam ◽  
Induced Current ◽  
Optical Beam Induced Current

Near‐field optical beam induced current measurements on heterostructures

1995 ◽  
Vol 67 (13) ◽  
pp. 1862-1864 ◽  
Author(s):  
M. S. Ünlü ◽  
B. B. Goldberg ◽  
W. D. Herzog ◽  
D. Sun ◽  
E. Towe
Keyword(s):  
Near Field ◽  
Optical Beam ◽  
Induced Current ◽  
Optical Beam Induced Current

scholarly journals Interest of Using a Micro-Meter Spatial Resolution to Study SiC Semi-Conductor Devices by Optical Beam Induced Current (OBIC)

2020 ◽  
Vol 1004 ◽  
pp. 290-298
Author(s):  
Camille Sonneville ◽  
Dominique Planson ◽  
Luong Viet Phung ◽  
Pascal Bevilacqua ◽  
Besar Asllani
Keyword(s):  
Band Gap ◽  
Spatial Resolution ◽  
High Voltage ◽  
Test Bench ◽  
Wide Band ◽  
Optical Beam ◽  
Induced Current ◽  
Wide Band Gap ◽  
Optical Beam Induced Current

In this paper we present a new test bench called micro-OBIC used to characterized wide band gap semi-conductor. Micro-OBIC allows to get an Optical Beam Induced Current (OBIC) signal with a microscopic spatial resolution. We used micro-OBIC to characterize peripheral protection such as MESA, JTE or JTE in high voltage SiC device.

scholarly journals Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current

2015 ◽  
Vol 821-823 ◽  
pp. 223-228 ◽  
Author(s):  
Hassan Hamad ◽  
Christophe Raynaud ◽  
Pascal Bevilacqua ◽  
Sigo Scharnholz ◽  
Dominique Planson
Keyword(s):  
Temperature Dependence ◽  
Optical Beam ◽  
Induced Current ◽  
Power Devices ◽  
Multiplication Coefficient ◽  
Pn Junctions ◽  
Ionization Rates ◽  
Optical Beam Induced Current

The behavior of 4H-SiC power devices in severe environment with varying temperature is a key characteristic indicating their reliability. This paper shows the dependence of the ionization rates of 4H-SiC with respect to temperature. Optical Beam Induced Current (OBIC) measurements have been performed on PN junctions to determine the multiplication coefficient for temperature varying between 100 and 450K. That allows extracting the ionization rates by fitting the curves of multiplication coefficient.

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