Thin-Barrier Strained Quantum Well Superlattice Solar Cells

2019 ◽  
Author(s):  
Seth M. Hubbard ◽  
Mitsul Kacharia ◽  
Anastasiia Fedorenko ◽  
Stephen J. Polly ◽  
Roger Welser ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Strained Quantum Well ◽  
Thin Barrier

Carrier Transport and Improved Collection in Thin-Barrier InGaAs/GaAsP Strained Quantum Well Solar Cells

2013 ◽  
Vol 3 (1) ◽  
pp. 278-283 ◽  
Author(s):  
Geoffrey K. Bradshaw ◽  
C. Zachary Carlin ◽  
Joshua P. Samberg ◽  
Nadia A. El-Masry ◽  
Peter C. Colter ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Carrier Transport ◽  
Strained Quantum Well ◽  
Thin Barrier

Effect of Back-Surface Reflectors on the Performance of Strain-Balanced Quantum Well Solar Cells

2008 ◽  
Author(s):  
Jessica Adams ◽  
Ravin Ginige ◽  
James Connolly ◽  
Ian Ballard ◽  
Benjamin Browne ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Well ◽  
Back Surface

Improvement of the Lifetime of a GaAs-Based Laser on Si with a Strained Quantum-Well Structure.

1994 ◽  
Vol 22 (12) ◽  
pp. 977-984
Author(s):  
Yoshiaki HASEGAWA ◽  
Takashi EGAWA ◽  
Takashi JIMBO ◽  
Masayoshi UMENO
Keyword(s):  
Quantum Well ◽  
Quantum Well Structure ◽  
Strained Quantum Well

NIR resonant-cavity-enhanced InP/InGaAs strained quantum well interband photodetector

1999 ◽  
Author(s):  
Serguei Jourba ◽  
Marie-Paule Besland ◽  
Michel Gendry ◽  
Michel Garrigues ◽  
Jean Louis Leclercq ◽  
...  
Keyword(s):  
Quantum Well ◽  
Resonant Cavity ◽  
Strained Quantum Well

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

Anomalous dispersion, differential gain, and dispersion of the α-factor in InGaAs/AlGaAs/GaAs strained quantum-well semiconductor lasers

2000 ◽  
Vol 34 (10) ◽  
pp. 1207-1213 ◽  
Author(s):  
A. P. Bogatov ◽  
A. E. Boltaseva ◽  
A. E. Drakin ◽  
M. A. Belkin ◽  
V. P. Konyaev
Keyword(s):  
Quantum Well ◽  
Semiconductor Lasers ◽  
Anomalous Dispersion ◽  
Differential Gain ◽  
Strained Quantum Well
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