High current transmission line pulse (TLP) and ESD characterization of a silicon germanium heterojunction bipolar transistor with carbon incorporation

2003 ◽  
Author(s):  
B. Ronan ◽  
S. Voldman ◽  
L. Lanzerotti ◽  
J. Rascoe ◽  
D. Sheridan ◽  
...  
Keyword(s):  
Transmission Line ◽  
Silicon Germanium ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
High Current ◽  
Carbon Incorporation ◽  
Current Transmission

Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAsNpNdouble-heterojunction bipolar transistor structure

2001 ◽  
Vol 90 (9) ◽  
pp. 4565-4569 ◽  
Author(s):  
C. J. Lin ◽  
Y. S. Huang ◽  
N. Y. Li ◽  
P. W. Li ◽  
K. K. Tiong
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Transistor Structure

Characterization of GaAs/Ga1−xAlxAs heterojunction bipolar transistor structures using photoreflectance

1990 ◽  
Vol 56 (13) ◽  
pp. 1278-1280 ◽  
Author(s):  
X. Yin ◽  
Fred H. Pollak ◽  
L. Pawlowicz ◽  
T. O’Neill ◽  
M. Hafizi
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor
Sign in / Sign up

Export Citation Format

Share Document