1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98

Thermal resistance degradation of alloy die attached power devices during thermal cycling

1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98 ◽

10.1109/relphy.1998.670558 ◽

1998 ◽

Cited By ~ 1

Author(s):

J. Naderman ◽

F.W. Ragay ◽

D.G. De Vries ◽

A. Van Eck ◽

J. Van de Water

Keyword(s):

Thermal Resistance ◽

Thermal Cycling ◽

Power Devices ◽

Resistance Degradation

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1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)

1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98 ◽

10.1109/relphy.1998.670434 ◽

1998 ◽

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Effects of advanced processes on hot carrier reliability

1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98 ◽

10.1109/relphy.1998.670512 ◽

1998 ◽

Cited By ~ 7

Author(s):

S. Aur ◽

T. Grider ◽

V. McNeil ◽

T. Holloway ◽

R. Eklund

Keyword(s):

Hot Carrier

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Improvement of gate dielectric reliability for p/sup +/ poly MOS devices using remote PECVD top nitride deposition on thin gate oxides

1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98 ◽

10.1109/relphy.1998.670446 ◽

1998 ◽

Cited By ~ 8

Author(s):

Y. Wu ◽

G. Lucovsky ◽

H.Z. Massoud

Keyword(s):

Gate Dielectric ◽

Gate Oxides ◽

Mos Devices

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Critical parameters for reliable surface mounting of high pincount packages

1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98 ◽

10.1109/relphy.1998.670554 ◽

1998 ◽

Author(s):

B.L. Euzent ◽

B.K. Kawanami ◽

S. Lau

Keyword(s):

Critical Parameters ◽

Surface Mounting

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REDR-based kinetics for line defects leading to sudden failures in 980 nm SL SQW InGaAs laser diodes

1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98 ◽

10.1109/relphy.1998.670459 ◽

1998 ◽

Cited By ~ 2

Author(s):

A. Bonfiglio ◽

M.B. Casu ◽

M. Vanzi ◽

F. Magistrali ◽

M. Maini ◽

...

Keyword(s):

Laser Diodes ◽

Line Defects

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Channel coupling imposed tradeoffs on hot carrier degradation and single transistor latch-up in SOI MOSFETs

1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98 ◽

10.1109/relphy.1998.670542 ◽

1998 ◽

Author(s):

F.L. Duan ◽

D.E. Ioannou ◽

W.C. Jenkins ◽

H.L. Hughes ◽

M.S.T. Liu

Keyword(s):

Channel Coupling ◽

Hot Carrier ◽

Hot Carrier Degradation ◽

Latch Up

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High-current transmission line pulse characterization of aluminum and copper interconnects for advanced CMOS semiconductor technologies

1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98 ◽

10.1109/relphy.1998.670659 ◽

1998 ◽

Cited By ~ 12

Author(s):

S. Voldman ◽

R. Gauthier ◽

D. Reinhart ◽

K. Morrisseau

Keyword(s):

Transmission Line ◽

Copper Interconnects ◽

High Current ◽

Current Transmission ◽

Pulse Characterization

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Effect of H/sub 2/O partial pressure and temperature during Ti sputtering on texture and electromigration in AlSiCu-Ti-TiN-Ti metallization

1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98 ◽

10.1109/relphy.1998.670666 ◽

1998 ◽

Author(s):

T. Yoshida ◽

S. Hashimoto ◽

Y. Mitsushima ◽

T. Ohwaki ◽

Y. Taga

Keyword(s):

Partial Pressure

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Impact of screening of latent defects at electrical test on the yield-reliability relation and application to burn-in elimination

1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98 ◽

10.1109/relphy.1998.670671 ◽

1998 ◽

Cited By ~ 27

Author(s):

J.A. Van der Pol ◽

E.R. Ooms ◽

T. Van 't Hof ◽

F.G. Kuper

Keyword(s):

Electrical Test ◽

Latent Defects

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1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Thermal resistance degradation of alloy die attached power devices during thermal cycling

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)

Effects of advanced processes on hot carrier reliability

Improvement of gate dielectric reliability for p/sup +/ poly MOS devices using remote PECVD top nitride deposition on thin gate oxides

Critical parameters for reliable surface mounting of high pincount packages

REDR-based kinetics for line defects leading to sudden failures in 980 nm SL SQW InGaAs laser diodes

Channel coupling imposed tradeoffs on hot carrier degradation and single transistor latch-up in SOI MOSFETs

High-current transmission line pulse characterization of aluminum and copper interconnects for advanced CMOS semiconductor technologies

Effect of H/sub 2/O partial pressure and temperature during Ti sputtering on texture and electromigration in AlSiCu-Ti-TiN-Ti metallization

Impact of screening of latent defects at electrical test on the yield-reliability relation and application to burn-in elimination

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1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Thermal resistance degradation of alloy die attached power devices during thermal cycling

1998 IEEE International Reliability Physics Symposium Proceedings. 36th Annual (Cat. No.98CH36173)

Effects of advanced processes on hot carrier reliability

Improvement of gate dielectric reliability for p/sup +/ poly MOS devices using remote PECVD top nitride deposition on thin gate oxides

Critical parameters for reliable surface mounting of high pincount packages

REDR-based kinetics for line defects leading to sudden failures in 980 nm SL SQW InGaAs laser diodes

Channel coupling imposed tradeoffs on hot carrier degradation and single transistor latch-up in SOI MOSFETs

High-current transmission line pulse characterization of aluminum and copper interconnects for advanced CMOS semiconductor technologies

Effect of H/sub 2/O partial pressure and temperature during Ti sputtering on texture and electromigration in AlSiCu-Ti-TiN-Ti metallization

Impact of screening of latent defects at electrical test on the yield-reliability relation and application to burn-in elimination

1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No 98CH36173) RELPHY-98
Latest Publications