1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest]
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Modeling of High Energy Transport in Silicon by Means of the Monte Carlo Method

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664534 ◽

2005 ◽

Author(s):

E. Sangiorgi ◽

C. Fiegna ◽

A. Abramo

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Energy Transport ◽

High Energy ◽

The Monte Carlo Method

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Device Modeling Beyond Drift Diffusion Approximation

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664529 ◽

2005 ◽

Author(s):

W.L. Engl ◽

B. Monerzhagen

Keyword(s):

Diffusion Approximation ◽

Device Modeling ◽

Drift Diffusion

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Design and Simulation of Analog Circuits for Adaptive Resonance Theory (art) Neural Networks

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664552 ◽

2005 ◽

Author(s):

C.-S. Ho ◽

J.J. Liou ◽

M. Georgiopoulos

Keyword(s):

Neural Networks ◽

Analog Circuits ◽

Adaptive Resonance Theory ◽

Resonance Theory ◽

Adaptive Resonance

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Modeling and Simulation of the Standard Cmos Compatible Lateral and Substrate Bjts for Analog Application

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664549 ◽

2005 ◽

Author(s):

En-Jer Jack Jang

Keyword(s):

Modeling And Simulation ◽

Cmos Compatible

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An Analytical Threshold Voltage Model for Sige-Channel Pmos Devices

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664548 ◽

2005 ◽

Author(s):

J.B. Kuo ◽

M.C. Tang ◽

J.H. Sim

Keyword(s):

Threshold Voltage ◽

Threshold Voltage Model

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Oxidation Modeling of Thin SiO/sub 2/ Using N/sub 2/O for Deep Submicron Cmos Technology

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664547 ◽

2005 ◽

Author(s):

S.C. Sun ◽

H.Y. Chang ◽

T.S. Chao

Keyword(s):

Cmos Technology ◽

Deep Submicron ◽

Submicron Cmos ◽

Oxidation Modeling

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The Status of Semiconductor Device Modeling in the Classical Domain

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664531 ◽

2005 ◽

Author(s):

A.H. Marshak

Keyword(s):

Semiconductor Device ◽

Device Modeling ◽

Semiconductor Device Modeling ◽

Classical Domain ◽

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The Shorted Anode Base Resistance Controlled Thyristor

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664551 ◽

2005 ◽

Author(s):

D. Flores ◽

P. Godignon ◽

J. Fernandez ◽

S. Hidalgo ◽

J. Rebollo ◽

...

Keyword(s):

Base Resistance

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An Analytical Forward Transit Time/current Gain Model for SiGe-Base Hbts

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664565 ◽

2005 ◽

Author(s):

T.C. Lu ◽

H.P. Chen ◽

J.B. Kuo

Keyword(s):

Transit Time ◽

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The Modeling and Characterization of Poly-Emitter n-p-n Bipolar Transistor in Bicmos Device

1993 Symposium on Semiconductor Modeling and Simulation [Technical Digest] ◽

10.1109/sms.1993.664538 ◽

2005 ◽

Author(s):

G.M. Hong ◽

J.Y. Lin ◽

K.Z. Chang ◽

S.G. Lu ◽

H.L. Hwang

Keyword(s):

Bipolar Transistor

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