2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320)

Leakage current and reliability evaluation of ultra-thin reoxidized nitride and comparison with silicon dioxides

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996645 ◽

2003 ◽

Cited By ~ 2

Author(s):

E.Y. Wu ◽

R.-P. Vollertsen ◽

R. Jarnmy ◽

A. Strong ◽

C. Radens

Keyword(s):

Leakage Current ◽

Reliability Evaluation

Impact of negative bias temperature instability on digital circuit reliability

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996644 ◽

2003 ◽

Cited By ~ 102

Author(s):

V. Reddy ◽

A.T. Krishnan ◽

A. Marshall ◽

J. Rodriguez ◽

S. Natarajan ◽

...

Keyword(s):

Digital Circuit ◽

Negative Bias ◽

Circuit Reliability ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

Accelerated reliability - thermal and mechanical fatigue solder joints methodologies

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996627 ◽

2003 ◽

Cited By ~ 1

Author(s):

N. Strifas ◽

C. Vaughan ◽

M. Ruzzene

Keyword(s):

Solder Joints ◽

Mechanical Fatigue

Recovery of shifted MOS parameters induced by focused ion beam exposure

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996635 ◽

2003 ◽

Author(s):

Kaiyuan Chen ◽

T. Chatterjee ◽

J. Parker ◽

T. Henderson ◽

R.S. Martin ◽

...

Keyword(s):

Focused Ion Beam ◽

Ion Beam

A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996609 ◽

2003 ◽

Cited By ~ 46

Author(s):

F. Monsieur ◽

E. Vincent ◽

D. Roy ◽

S. Bruyere ◽

J.C. Vildeuil ◽

...

Keyword(s):

Reliability Assessment ◽

Physical Understanding

Analysis of the exponentially decaying transient current in MOS capacitors

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996668 ◽

2003 ◽

Author(s):

R.-I. Yamada ◽

J. Yugami

Keyword(s):

Transient Current ◽

Mos Capacitors

Modeling of substrate related extrinsic oxide failure distributions

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996669 ◽

2003 ◽

Cited By ~ 3

Author(s):

T. Pompl ◽

M. Kerber ◽

G. Innertsberger ◽

K.-H. Allers ◽

M. Obry ◽

...

The effects of total ionizing dose irradiation on CMOS technology and the use of design techniques to mitigate total dose effects

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996663 ◽

2003 ◽

Cited By ~ 5

Author(s):

R.C. Lacoe

Keyword(s):

Total Dose ◽

Cmos Technology ◽

Total Ionizing Dose ◽

Dose Irradiation ◽

Dose Effects ◽

Total Dose Effects ◽

Design Techniques

Investigation of gate to contact spacing effect on ESD robustness of salicided deep submicron single finger NMOS transistors

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996628 ◽

2003 ◽

Cited By ~ 1

Author(s):

Kwang-Hoon Oh ◽

C. Duvvury ◽

K. Banerjee ◽

R.W. Dutton

Keyword(s):

Spacing Effect ◽

Deep Submicron ◽

Single Finger ◽

Nmos Transistors

A drain avalanche hot carrier lifetime model for n- and p-channel MOSFETs

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996614 ◽

2003 ◽

Cited By ~ 4

Author(s):

N. Koike ◽

K. Tatsuuma

Keyword(s):

Carrier Lifetime ◽

Hot Carrier ◽

Lifetime Model

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Leakage current and reliability evaluation of ultra-thin reoxidized nitride and comparison with silicon dioxides

Impact of negative bias temperature instability on digital circuit reliability

Accelerated reliability - thermal and mechanical fatigue solder joints methodologies

Recovery of shifted MOS parameters induced by focused ion beam exposure

A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment

Analysis of the exponentially decaying transient current in MOS capacitors

Modeling of substrate related extrinsic oxide failure distributions

The effects of total ionizing dose irradiation on CMOS technology and the use of design techniques to mitigate total dose effects

Investigation of gate to contact spacing effect on ESD robustness of salicided deep submicron single finger NMOS transistors

A drain avalanche hot carrier lifetime model for n- and p-channel MOSFETs

Export Citation Format

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Leakage current and reliability evaluation of ultra-thin reoxidized nitride and comparison with silicon dioxides

Impact of negative bias temperature instability on digital circuit reliability

Accelerated reliability - thermal and mechanical fatigue solder joints methodologies

Recovery of shifted MOS parameters induced by focused ion beam exposure

A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment

Analysis of the exponentially decaying transient current in MOS capacitors

Modeling of substrate related extrinsic oxide failure distributions

The effects of total ionizing dose irradiation on CMOS technology and the use of design techniques to mitigate total dose effects

Investigation of gate to contact spacing effect on ESD robustness of salicided deep submicron single finger NMOS transistors

A drain avalanche hot carrier lifetime model for n- and p-channel MOSFETs

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320)
Latest Publications