A 240 GHz direct conversion IQ receiver in 0.13 μm SiGe BiCMOS technology

2013 ◽  
Author(s):  
Mohamed Elkhouly ◽  
Yanfie Mao ◽  
Srdian Glisic ◽  
Chafik Meliani ◽  
Frank Ellinger ◽  
...  
Keyword(s):  
Direct Conversion ◽  
Bicmos Technology ◽  
Sige Bicmos

A W-band direct-conversion I-Q mixer in 0.13μm SiGe BiCMOS technology

2016 ◽  
Author(s):  
Wei Liu ◽  
Haitao Liu ◽  
Ruitao Wang ◽  
Yihu Li ◽  
Xu Cheng ◽  
...  
Keyword(s):  
Direct Conversion ◽  
W Band ◽  
Bicmos Technology ◽  
Sige Bicmos

scholarly journals A fully integrated D-band direct-conversion I/Q transmitter and receiver chipset in SiGe BiCMOS technology

2021 ◽  
Vol 23 (2) ◽  
pp. 73-82
Author(s):  
Sona Carpenter ◽  
Herbert Zirath ◽  
Zhongxia Simon He ◽  
Mingquan Bao
Keyword(s):  
Direct Conversion ◽  
Fully Integrated ◽  
Bicmos Technology ◽  
Sige Bicmos

Operation of Current Mirrors in SiGe BiCMOS Technology at Cryogenic Temperatures

2021 ◽  
Vol 68 (4) ◽  
pp. 1439-1445
Author(s):  
Hanbin Ying ◽  
Jeffrey W. Teng ◽  
John D. Cressler
Keyword(s):  
Cryogenic Temperatures ◽  
Current Mirrors ◽  
Bicmos Technology ◽  
Sige Bicmos

Total Dose and Transient Response of SiGe HBTs from a New 4th-Generation, 90 nm SiGe BiCMOS Technology

2012 ◽  
Author(s):  
Nelson E. Lourenco ◽  
Robert L. Schmid ◽  
Kurt A. Moen ◽  
Stanley D. Phillips ◽  
Troy D. England ◽  
...  
Keyword(s):  
Total Dose ◽  
Transient Response ◽  
Bicmos Technology ◽  
Sige Bicmos
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