A 5-6 GHz Low-Noise Amplifier with > 65-dB Variable-Gain Control in 22nm FinFET CMOS Technology

Author(s):  
Yi-Shin Yeh ◽  
Hyung-Jin Lee
2011 ◽  
Vol 21 (11) ◽  
pp. 610-612 ◽  
Author(s):  
Yi-Keng Hsieh ◽  
Jing-Lin Kuo ◽  
Huei Wang ◽  
Liang-Hung Lu

1992 ◽  
Vol 27 (7) ◽  
pp. 974-981 ◽  
Author(s):  
J. Hauptmann ◽  
F. Dielacher ◽  
R. Steiner ◽  
C.C. Enz ◽  
F. Krummenacher

Author(s):  
Ji-tian Chen ◽  
Wan-rong Zhang ◽  
Dong-yue Jin ◽  
Hong-yun Xie ◽  
Ya-ze Liu ◽  
...  

2018 ◽  
Vol 7 (3.6) ◽  
pp. 84
Author(s):  
N Malika Begum ◽  
W Yasmeen

This paper presents an Ultra-Wideband (UWB) 3-5 GHz Low Noise Amplifier (LNA) employing Chebyshev filter. The LNA has been designed using Cadence 0.18um CMOS technology. Proposed LNA achieves a minimum noise figure of 2.2dB, power gain of 9dB.The power consumption is 6.3mW from 1.8V power supply.  


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