A Compact Low Noise Amplifier with Defected Microstrip Structure for Ultra-Wideband Communications

Author(s):  
Nasrullah Saifullah ◽  
Zahriladha Zakaria ◽  
Sam Weng Yik ◽  
Nornikman Hassan ◽  
Noor Azwan Shairi
Author(s):  
Ji-tian Chen ◽  
Wan-rong Zhang ◽  
Dong-yue Jin ◽  
Hong-yun Xie ◽  
Ya-ze Liu ◽  
...  

2021 ◽  
Author(s):  
Zerun Jin ◽  
Zhi-Jian Chen ◽  
Riyan Wang ◽  
Bin Li ◽  
Xiao-Ling Lin

2018 ◽  
Vol 7 (3.6) ◽  
pp. 84
Author(s):  
N Malika Begum ◽  
W Yasmeen

This paper presents an Ultra-Wideband (UWB) 3-5 GHz Low Noise Amplifier (LNA) employing Chebyshev filter. The LNA has been designed using Cadence 0.18um CMOS technology. Proposed LNA achieves a minimum noise figure of 2.2dB, power gain of 9dB.The power consumption is 6.3mW from 1.8V power supply.  


2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
K. Yousef ◽  
H. Jia ◽  
R. Pokharel ◽  
A. Allam ◽  
M. Ragab ◽  
...  

This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 µm CMOS technology process.


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