CMOS Ultra-Wideband Low Noise Amplifier Design
2013 ◽
Vol 2013
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pp. 1-6
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This paper presents the design of ultra-wideband low noise amplifier (UWB LNA). The proposed UWB LNA whose bandwidth extends from 2.5 GHz to 16 GHz is designed using a symmetric 3D RF integrated inductor. This UWB LNA has a gain of 11 ± 1.0 dB and a NF less than 3.3 dB. Good input and output impedance matching and good isolation are achieved over the operating frequency band. The proposed UWB LNA is driven from a 1.8 V supply. The UWB LNA is designed and simulated in standard TSMC 0.18 µm CMOS technology process.
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2017 ◽
Vol 7
(1.3)
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pp. 69
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2007 ◽
Vol 17
(2)
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pp. 153-159
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2010 ◽
Vol 58
(4)
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pp. 795-806
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