Broadband differential 1.5–5 GHz LO buffer amplifier based on SiGe BiCMOS technology

2017 ◽  
Author(s):  
A. A. Kokolov ◽  
F. I. Sheyerman ◽  
L. I. Babak
Keyword(s):  
Bicmos Technology ◽  
Sige Bicmos ◽  
Buffer Amplifier ◽  
5 Ghz

Design of RFICs in 0.35 /spl mu/m Si/SiGe BiCMOS technology for a 5 GHz domotic transmitter

2005 ◽  
Author(s):  
F. Alimenti ◽  
M. Borgarino ◽  
R. Codeluppi ◽  
V. Palazzari ◽  
M. Pifferi ◽  
...  
Keyword(s):  
Bicmos Technology ◽  
Sige Bicmos ◽  
5 Ghz

scholarly journals An Integrated 5 GHz Wideband Quadrature Modem for OFDM Gbit/s Transmission in SiGe:C BiCMOS

2007 ◽  
Vol 2007 ◽  
pp. 1-8 ◽  
Author(s):  
Klaus Schmalz ◽  
Eckard Grass ◽  
Frank Herzel ◽  
Maxim Piz
Keyword(s):  
Phase Noise ◽  
Signal To Noise Ratio ◽  
Phase Locked Loop ◽  
Frequency Divider ◽  
Signal To Noise ◽  
Ofdm Signal ◽  
Bicmos Technology ◽  
Sige Bicmos ◽  
5 Ghz ◽  
Quadrature Signals

This paper presents a 5 GHz wideband I/Q modulator/demodulator for 650 MHz OFDM signal bandwidth, which is integrated with a 5 GHz phase locked loop for I/Q generation. The quadrature signals are derived from a 10 GHz CMOS VCO followed by a bipolar frequency divider. The phase noise at 1 MHz offset is −112 dBc/Hz for the modulator as well as for the demodulator. The chips were produced in a 0.25 μm SiGe BiCMOS technology. The signal-to-noise ratio (SNR) of transmitted/received OFDM signal and the corresponding I/Q mismatch versus baseband frequency are given. The modulator achieves an SNR of 22–23 dB, and the demodulator realizes an SNR up to 22 dB. The modulator reaches a data rate of 2.16 Gbit/s using 64 QAM OFDM, and the demodulator realizes 1.92 Gbits/s.

A DC–5 GHz NMOSFET SPDT T/R switch in 0.25-μm SiGe BiCMOS technology

2004 ◽  
Vol 224 (1-4) ◽  
pp. 434-438 ◽  
Author(s):  
Paolo Crippa ◽  
Simone Orcioni ◽  
Francesco Ricciardi ◽  
Claudio Turchetti
Keyword(s):  
Bicmos Technology ◽  
Sige Bicmos ◽  
5 Ghz

Design of a 3–5-GHz ultrawideband BiFET mixer using 0.35-μm SiGE BiCMOS technology

2007 ◽  
Vol 49 (4) ◽  
pp. 965-968 ◽  
Author(s):  
Song Ruifeng ◽  
Liao Huailin ◽  
Huang Ru ◽  
Wang Yangyuan
Keyword(s):  
Bicmos Technology ◽  
Sige Bicmos ◽  
5 Ghz

Operation of Current Mirrors in SiGe BiCMOS Technology at Cryogenic Temperatures

2021 ◽  
Vol 68 (4) ◽  
pp. 1439-1445
Author(s):  
Hanbin Ying ◽  
Jeffrey W. Teng ◽  
John D. Cressler
Keyword(s):  
Cryogenic Temperatures ◽  
Current Mirrors ◽  
Bicmos Technology ◽  
Sige Bicmos
Sign in / Sign up

Export Citation Format

Share Document