Physical modeling of transient enhanced diffusion and dopant deactivation via extended defect evolution

Author(s):  
A.H. Gencer ◽  
S. Chakravarthi ◽  
S.T. Dunham
1997 ◽  
Vol 469 ◽  
Author(s):  
A. H. Gencer ◽  
S. Chakravarthi ◽  
I. Clejan ◽  
S. T. Dunham

Prediction of transient enhanced diffusion (TED) requires modeling of extended defects of many types, such as {311} defects, dislocation loops, boron-interstitial clusters, arsenic precipitates, etc. These extended defects not only form individually, but they also interact with each other through changes in point defect and solute concentrations. We have developed a fundamental model which can account for the behavior of a broad range of extended defects, as well as their interactions with each other. We have successfully applied and parameterized our model to a range of systems and conditions, some of which are presented in this paper.


1998 ◽  
Vol 532 ◽  
Author(s):  
Alp H. Gencer ◽  
Scott T. Dunham

ABSTRACTAccurate modeling of extended defect kinetics is of primary importance for predictive modeling of transient enhanced diffusion (TED). Our previously developed model accurately accounts for extended defects and can be used predictively for TED. Using some experimental knowledge about the distribution of the extended defect population we can simplify our model. We demonstrate that reducing the number of solution variables by one doesn't affect the predictive capabilities of the model for extended defect kinetics and TED. However, some caution has to be used when applying the same principles to modeling of dopant deactivation.


1996 ◽  
Vol 438 ◽  
Author(s):  
M. E. Law ◽  
K. S. Jones ◽  
S. K. Earles ◽  
A. D. Lilak ◽  
J-W. Xu

AbstractTransient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.


2000 ◽  
Vol 610 ◽  
Author(s):  
Sanjay Rangan ◽  
Mark Horn ◽  
S. Ashok

AbstractAlleviating transient enhanced diffusion (TED) is one among several issues that has to be solved to realize deep sub-micron CMOS. In this paper we present the influence of hydrogen plasma on TED of boron, along with deep level transient spectroscopic (DLTS) studies on defect evolution as a function of anneal temperature. The studies reveal that TED monotonically increases as a function of anneal temperature up to 650°C, where maximum TED occurs. Further increase in anneal temperature reveals TED reduction. The DLTS reveals a corresponding increase in defect density up to 650°C and then decreases when annealed at 850°C for the same amount of time.


1997 ◽  
Vol 469 ◽  
Author(s):  
V. Krishnamoorthy ◽  
D. Venables ◽  
K. Moeller ◽  
K. S. Jones ◽  
J. Jackson

ABSTRACT(001) CZ silicon wafers were implanted with As at lOOkeV to a dose of 1×1015/cm2. The implant was amorphizing in nature and the peak As concentration was below the As clustering threshold. Subsequently, a second As+or Ge+ implant at 30keV at doses of 2×1015/cm2, 5×1015/cm2 and 1×1016/cm2 were performed, respectively, into the as-implanted samples. The samples with a double arsenic implant induce As clustering at the lower doses and As precipitation at the highest dose at the projected range. However, the samples with the Ge do not induce clustering or precipitation. The samples were annealed at 700°C for various times to regrow the amorphous layer and to cause enhanced arsenic diffusion beyond the end-of range region. These samples wereanalyzed by SIMS and TEM. The difference in the defect evolution at the end-of-range region and TED beyond the end-of-range region between the As and Ge implanted samples was used to isolate the effects of As clustering and precipitation.


2003 ◽  
Vol 94 (2) ◽  
pp. 1013-1018 ◽  
Author(s):  
Maria Aboy ◽  
Lourdes Pelaz ◽  
Luis A. Marqués ◽  
L. Enriquez ◽  
Juan Barbolla

1999 ◽  
Vol 568 ◽  
Author(s):  
J. Li ◽  
P. Keys ◽  
J. Chen ◽  
M. E. Law ◽  
K. S. Jones ◽  
...  

ABSTRACTContinuous scaling of device dimensions requires better understanding of non-equilibrium diffusion phenomena such as transient enhanced diffusion (TED). To this end, it is important to understand the relationship of the defect evolution with TED. Defect evolution in P+ implanted Si has been investigated by transmission electron microscopy (TEM). Secondary ion mass spectroscopy (SIMS) has been used to study phosphorus TED. These studies show that another type of defect, i.e. dot defects are present in P+implanted Si (100 keV, 1.OX104/cm2). The evolution of defects in P+ implants is compared with that in Si+ implants. P+ implants give rise to small dot defects mixed with {311} defects while Si+ implants give rise to only {311} defects. The dot defects and {311} defects in P+ implants dissolve faster than the {311} defects from Si+ implants. The interstitial concentration trapped in the dot defects and the {311} defects from P+ implants is slight lower than that from Si+ implants. Dot defects seem to have only a small role in phosphorus TED. Interaction of silicon interstitials emitted from the dissolution of {311} defects with phosphorus dopant atoms is believed to be the dominant driving force for the TED. There may also be a contribution from dissolution of non-visible phosphorus interstitial clusters (PIC's). Correlation of defect evolution and TED has been addressed.


1996 ◽  
Vol 439 ◽  
Author(s):  
M. E. Law ◽  
K. S. Jones ◽  
S. K. Earles ◽  
A. D. Lilak ◽  
J- W. Xu

AbstractTransient Enhanced Diffusion (TED) is one of the biggest modeling challenges present in predicting scaled technologies. Damage from implantation of dopant ions changes the diffusivities of the dopants and precipitates to form complex extended defects. Developing a quantitative model for the extended defect behavior during short time, low temperature anneals is a key to explaining TED. This paper reviews some of the modeling developments over the last several years, and discusses some of the challenges that remain to be addressed. Two examples of models compared to experimental work are presented and discussed.


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