2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

Experimental Auger Recombination Study of a 2 µm GaSb-Based Quantum Well Laser via Sidewall Spontaneous Emission

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa49335.2020.9260833 ◽

2020 ◽

Author(s):

X. Li ◽

H. Wang ◽

W. Wang ◽

J. X. B. Sia ◽

X. Guo ◽

...

Keyword(s):

Quantum Well ◽

Spontaneous Emission ◽

Auger Recombination ◽

Quantum Well Laser

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Physical Modeling the Impact of Self-Heating on Hot-Carrier Degradation in pNWFETs

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa49335.2020.9260648 ◽

2020 ◽

Author(s):

S. Tyaginov ◽

A. Makarov ◽

A. Chasin ◽

E. Bury ◽

M. Vandemaele ◽

...

Keyword(s):

Physical Modeling ◽

Hot Carrier ◽

Self Heating ◽

The Impact ◽

Hot Carrier Degradation

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Multi-Dimensional Nanoscale Characterizations on Devices by DataCube-sMIM

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa49335.2020.9260896 ◽

2020 ◽

Author(s):

Peter Dewolf ◽

Wanxin Sun

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Silicon Nitride-induced Threshold Voltage Shift in p-GaN HEMTs with Au-free Gate-first Process

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa49335.2020.9260944 ◽

2020 ◽

Author(s):

Yi-Cheng Chen ◽

Shun-Wei Tang ◽

Pin-Hau Lin ◽

Zheng-Chen Chen ◽

Ming-Hao Lu ◽

...

Keyword(s):

Silicon Nitride ◽

Threshold Voltage ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Gan Hemts

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A CMUT receiving probe with an integrated preamplifier for through-transmission scanning acoustic tomography

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa49335.2020.9260824 ◽

2020 ◽

Author(s):

Taiichi Takezaki ◽

Shuntaro Machida ◽

Daisuke Ryuzaki

Keyword(s):

Acoustic Tomography

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Significance of pre- and post- EFI data processing to enhance dynamic electrical fault isolation success

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa49335.2020.9260742 ◽

2020 ◽

Author(s):

BL Yeoh ◽

MH Thor ◽

SH Goh ◽

YH Chan ◽

Li Song ◽

...

Keyword(s):

Data Processing ◽

Fault Isolation

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Exploring RRAM Variability as Synapses on Inception Simulation Framework to Characterize the Prediction Accuracy and Power Estimation per Bit for Convolution Neural Network

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa49335.2020.9260780 ◽

2020 ◽

Author(s):

N.L. Prabhu ◽

N. Raghavan

Keyword(s):

Neural Network ◽

Prediction Accuracy ◽

Power Estimation ◽

Convolution Neural Network ◽

Simulation Framework

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Effect of Cu barrier from TaN/Ta Deposition barrier(DD) & TaN/Etching/Ta Deposition barrier(DED) on Cu EM reliability

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa49335.2020.9261015 ◽

2020 ◽

Author(s):

Yun-Chi Liao ◽

Hui-Lan Sung ◽

Wei-Lin Wang

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Wafer Level High Density Hybrid Bonding for High Performance Computing

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa49335.2020.9260626 ◽

2020 ◽

Author(s):

Hong-Miao Ji ◽

Lin Ji ◽

Fa-Xing Che ◽

Hong-Yu. Li ◽

King-Jien Chui ◽

...

Keyword(s):

High Performance Computing ◽

High Performance ◽

High Density ◽

Wafer Level ◽

Performance Computing

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Analysis of the Effects of Boron Transient Enhanced Diffusion on Threshold Voltage Mismatch in Steep Retrograde Doping NMOSFETs with Inserted Oxygen Layers

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) ◽

10.1109/ipfa49335.2020.9260584 ◽

2020 ◽

Author(s):

Shuntaro Fujii ◽

Hideki Takeuchi ◽

Soichi Morita ◽

Tatsushi Yagi ◽

Shohei Hamada ◽

...

Keyword(s):

Threshold Voltage ◽

Enhanced Diffusion ◽

Transient Enhanced Diffusion

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2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Experimental Auger Recombination Study of a 2 µm GaSb-Based Quantum Well Laser via Sidewall Spontaneous Emission

Physical Modeling the Impact of Self-Heating on Hot-Carrier Degradation in pNWFETs

Multi-Dimensional Nanoscale Characterizations on Devices by DataCube-sMIM

Silicon Nitride-induced Threshold Voltage Shift in p-GaN HEMTs with Au-free Gate-first Process

A CMUT receiving probe with an integrated preamplifier for through-transmission scanning acoustic tomography

Significance of pre- and post- EFI data processing to enhance dynamic electrical fault isolation success

Exploring RRAM Variability as Synapses on Inception Simulation Framework to Characterize the Prediction Accuracy and Power Estimation per Bit for Convolution Neural Network

Effect of Cu barrier from TaN/Ta Deposition barrier(DD) & TaN/Etching/Ta Deposition barrier(DED) on Cu EM reliability

Wafer Level High Density Hybrid Bonding for High Performance Computing

Analysis of the Effects of Boron Transient Enhanced Diffusion on Threshold Voltage Mismatch in Steep Retrograde Doping NMOSFETs with Inserted Oxygen Layers

Export Citation Format

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Experimental Auger Recombination Study of a 2 µm GaSb-Based Quantum Well Laser via Sidewall Spontaneous Emission

Physical Modeling the Impact of Self-Heating on Hot-Carrier Degradation in pNWFETs

Multi-Dimensional Nanoscale Characterizations on Devices by DataCube-sMIM

Silicon Nitride-induced Threshold Voltage Shift in p-GaN HEMTs with Au-free Gate-first Process

A CMUT receiving probe with an integrated preamplifier for through-transmission scanning acoustic tomography

Significance of pre- and post- EFI data processing to enhance dynamic electrical fault isolation success

Exploring RRAM Variability as Synapses on Inception Simulation Framework to Characterize the Prediction Accuracy and Power Estimation per Bit for Convolution Neural Network

Effect of Cu barrier from TaN/Ta Deposition barrier(DD) & TaN/Etching/Ta Deposition barrier(DED) on Cu EM reliability

Wafer Level High Density Hybrid Bonding for High Performance Computing

Analysis of the Effects of Boron Transient Enhanced Diffusion on Threshold Voltage Mismatch in Steep Retrograde Doping NMOSFETs with Inserted Oxygen Layers

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
Latest Publications