NANOMETER THICKNESS SILICON-ON-INSULATOR FILMS THERMAL STABILITY

Thermal stability of 2.2 and 4.7 nm thick silicon-oninsulator films was studied within anneal temperature range of 800-1100оС. It was found that at the higher temperatures film thickness decreases and stoichiometric composition changes with increasing the proportion of the amorphous phase. Mechanisms of structural stability dependence upon film thickness is discussed.

The Anneal Temperature Effect on the BTO and NZFO Flims and Their Capacitance - Inductance Integrated Device

In this paper, a novel capacitor-inductor integrated structure was proposed. The dielectric material BaTiO3 (BTO) and ferromagnetic material Ni0.5Zn0.5Fe2O4 (NZFO) was prepared by sol-gel method. Phase composition and morphology of the thin films were characterized by XRD, SEM and AFM. The effect of annealing temperature on film crystallinity, surface morphology, dielectric properties and ferromagnetism were investigated. When the annealing temperature was 700 °C, the BTO film and the NZFO film got the better dielectric properties and ferromagnetic properties. Then the BTO thin film was spin-coated on the substrate, and the NZFO thin film was in-situ sintered on the BTO thin film. The composite film possessed both ferromagnetism and dielectric properties. Finally, an inductive coil was fabricated on the BTO/NZFO composite film to produce a capacitance and inductance integrated device.

An Electrical and Physical Study of Crystal Damage in High-Dose Al- and N-Implanted 4H-SiC

In this paper, an investigation into the crystal structure of Al-and N-implanted 4H-SiC is presented, encompassing a range of physical and electrical analysis techniques, with the aim of better understanding the material properties after high-dose implantation and activation annealing. Scanning spreading resistance microscopy showed that the use of high temperature implantation yields more uniform resistivity profiles in the implanted layer; this correlates with KOH defect decoration and TEM observations, which show that the crystal damage is much more severe in room temperature implanted samples, regardless of anneal temperature. Finally, stress determination by means of μRaman spectroscopy showed that the high temperature implantation results in lower tensile stress in the implanted layers with respect to the room temperature implantation samples.