SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest

2002 ◽

Author(s):

E.C. Kan ◽

Ze-Kai Hsiau ◽

V. Rao ◽

R.W. Dutton

Keyword(s):

Level Set Method ◽

Level Set ◽

Device Simulation ◽

Semiconductor Process

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Tilt angle effect on optimizing HALO PMOS performance

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest ◽

10.1109/sispad.1997.621329 ◽

2002 ◽

Author(s):

Jiong-Guang Su ◽

Shyh-Chyi Wong ◽

Chi-Tsung Huang ◽

Chang-Ching Cheng ◽

Chih-Chiang Wang ◽

...

Keyword(s):

Tilt Angle ◽

Angle Effect

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ICM-an analytical inversion charge model for accurate modeling of thin gate oxide MOSFETs

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest ◽

10.1109/sispad.1997.621348 ◽

2002 ◽

Cited By ~ 1

Author(s):

Yuhua Cheng ◽

Kai Chen ◽

K. Imai ◽

Chenming Hu

Keyword(s):

Gate Oxide ◽

Charge Model ◽

Inversion Charge ◽

Thin Gate Oxide

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An experimental methodology for the estimation of spatially correlated parametric yield in thin film devices

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest ◽

10.1109/sispad.1997.621332 ◽

2002 ◽

Cited By ~ 2

Author(s):

E.T. Carlen ◽

C.H. Mastrangelo

Keyword(s):

Thin Film ◽

Experimental Methodology ◽

Spatially Correlated ◽

Parametric Yield ◽

Thin Film Devices

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Methodology for predictive calibration of TCAD simulators

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest ◽

10.1109/sispad.1997.621366 ◽

2002 ◽

Cited By ~ 1

Author(s):

G. Le Carval ◽

P. Scheiblin ◽

D. Poncet ◽

P. Rivallin

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Fast algorithms for computing electrostatic geometric sensitivities

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest ◽

10.1109/sispad.1997.621351 ◽

2002 ◽

Cited By ~ 2

Author(s):

J. Wang ◽

J. White

Keyword(s):

Fast Algorithms

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Physical modeling of transient enhanced diffusion and dopant deactivation via extended defect evolution

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest ◽

10.1109/sispad.1997.621340 ◽

2002 ◽

Author(s):

A.H. Gencer ◽

S. Chakravarthi ◽

S.T. Dunham

Keyword(s):

Physical Modeling ◽

Extended Defect ◽

Enhanced Diffusion ◽

Transient Enhanced Diffusion ◽

Defect Evolution ◽

Dopant Deactivation

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AMIGOS: analytical model interface and general object-oriented solver

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest ◽

10.1109/sispad.1997.621405 ◽

2002 ◽

Cited By ~ 3

Author(s):

M. Radi ◽

E. Leitner ◽

E. Hollensteiner ◽

S. Selberherr

Keyword(s):

Analytical Model ◽

Object Oriented ◽

General Object

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VLSI performance metric based on minimum TCAD simulations

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest ◽

10.1109/sispad.1997.621327 ◽

2002 ◽

Author(s):

G. Schrom ◽

V. De ◽

S. Selberherr

Keyword(s):

Performance Metric ◽

Tcad Simulations

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CMP profile simulation using an elastic model based on nonlinear contact analysis

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest ◽

10.1109/sispad.1997.621338 ◽

2002 ◽

Author(s):

Yoo-Hyon Kim ◽

Tai-Kyung Kim ◽

Hoong-Joo Lee ◽

Jeong-Taek Kong ◽

Sang-Hoon Lee

Keyword(s):

Contact Analysis ◽

Elastic Model ◽

Model Based ◽

Nonlinear Contact

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SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Gridding techniques for the level set method in semiconductor process and device simulation

Tilt angle effect on optimizing HALO PMOS performance

ICM-an analytical inversion charge model for accurate modeling of thin gate oxide MOSFETs

An experimental methodology for the estimation of spatially correlated parametric yield in thin film devices

Methodology for predictive calibration of TCAD simulators

Fast algorithms for computing electrostatic geometric sensitivities

Physical modeling of transient enhanced diffusion and dopant deactivation via extended defect evolution

AMIGOS: analytical model interface and general object-oriented solver

VLSI performance metric based on minimum TCAD simulations

CMP profile simulation using an elastic model based on nonlinear contact analysis

Export Citation Format

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical DigestLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Gridding techniques for the level set method in semiconductor process and device simulation

Tilt angle effect on optimizing HALO PMOS performance

ICM-an analytical inversion charge model for accurate modeling of thin gate oxide MOSFETs

An experimental methodology for the estimation of spatially correlated parametric yield in thin film devices

Methodology for predictive calibration of TCAD simulators

Fast algorithms for computing electrostatic geometric sensitivities

Physical modeling of transient enhanced diffusion and dopant deactivation via extended defect evolution

AMIGOS: analytical model interface and general object-oriented solver

VLSI performance metric based on minimum TCAD simulations

CMP profile simulation using an elastic model based on nonlinear contact analysis

SISPAD '97. 1997 International Conference on Simulation of Semiconductor Processes and Devices. Technical Digest
Latest Publications