Thermoelectric properties and devices of p-type Bi0.4Sb1.6Se2.4Te0.6 and n-type Bi2Se0.6Te2.4 prepared by solid state microwave synthesis

Author(s):  
Arej Kadhim Abbas ◽  
Arshad Hmood Abd Al Kadhim ◽  
Haslan Abu Hassan
2012 ◽  
Vol 501 ◽  
pp. 126-128 ◽  
Author(s):  
Arej Kadhim ◽  
Arshad Hmood ◽  
Abu Hassan Haslan

The thermoelectric materials based on p-type Bi2Se3xTe3 (1-x) bulk products and dispersed with x compositions of Se (x=0.0, 0.2, 0.4, 0.6, 0.8, 1.0) were fabricated using standard solid-state microwave synthesis procedures. The products were characterized by X-ray diffraction (XRD). The XRD characterizations revealed that these products are pure Bi2Te3 and Bi2Se3 with uniform structures. The electrical properties of the Bi2Te3, Bi2Se3 and Bi2Se3xTe3 (1-x) samples were measured in the temperature range of 303–523 K. The highest value of the Seebeck coefficient was 176.3 μV/ K for the Bi2Se0.6Te2.4 sample, but only 149.5 and 87.4 μV/K for the Bi2Te3 and Bi2Se3 samples, respectively.


2003 ◽  
Vol 793 ◽  
Author(s):  
Geoff D. Staneff ◽  
Paul D. Asimow ◽  
Thierry Caillat

ABSTRACTExotic filled skutterudite compositions show promise for thermoelectric applications. Current work was undertaken with a nominal composition of Ce(Ru0.67Rh0.33)4Sb12 to experimentally verify its potential as an n-type thermoelectric material. Nominal electroneutrality was expected at 0.89 cerium filling and fully filled materials were expected to be strongly n-type. Filled precursors of the nominal composition were synthesized using straightforward solid state reaction techniques, but standard synthesis routes failed to produce a fully-filled homogenous phase. Instead, the filled thermoelectric Ce(Ru0.67Rh0.33)4Sb12 was synthesized using a combination of solid state reaction of elemental constituents and high pressure hot pressing. A range of pressure-temperature conditions was explored; the upper temperature limit of filled skutterudite in this system decreases with increasing pressure and disappears by 12 GPa. The optimal synthesis was performed in multi-anvil devices at 4–6 GPa pressure and dwell temperatures of 350–700 °C. rutheniumThe result of this work, a Ce(Ru0.67Rh0.33)4Sb12 fully filled skutterudite material, exhibited unexpected p-type conductivity and an electrical resistance of 1.755 mΩ-cm that increased with temperature. Thermal conductivity, Seebeck coefficient, and resistivity were measured on single phase samples. In this paper, we report the details of the synthesis routeand measured thermoelectric properties, speculate on the deviation from expected carrier charge balance, and discuss implications for other filled skutterudite systems.


2013 ◽  
Vol 802 ◽  
pp. 17-21 ◽  
Author(s):  
Chesta Ruttanapun ◽  
Phumin Jindajitawat ◽  
Warawoot Thowladda ◽  
Worakarn Neeyakorn ◽  
Chanchana Thanachayanont ◽  
...  

This study aims to investigate the effect of the Sn2+-substituted into the CuFeO2delafossite on thermoelectric properties in the Sn content of x = 0.03, 0.05. The CuFe1−xSnxO2samples were synthesized by solid state reaction. The crystal structure was characterized by XRD, TGA, XPS and the thermoelectric properties were measured in the range of 300 to 960 K. The Seebeck coefficient display positive sign in all temperature range and the XPS show the stable Sn+2state as confirming the Sn-doped CuFeO2playing p-type conductor. The Sn2+-substituted supports the mixed valency Fe3+/Fe4+state in transition octahedral oxide of FeO6layer enhancing Seebeck coefficient. The high Seebeck are appeared in content of x=0.03 which are 280 to 340 µV/K in the range of 300 to 800 K. The experimental Seebeck corresponds to the prediction formula at high temperature. Totally, the maximum Power Factor is 2.30×10−4W/mK2occurring in the CuFe0.95Sn0.05O2at 860 K which is higher than that value of the undoped-CuFeO2in 4 times. These support that the Sn-substituted CuFeO2delafossite enhancing thermoelectric properties.


2021 ◽  
Vol 127 ◽  
pp. 105721
Author(s):  
Suchitra Yadav ◽  
Sujeet Chaudhary ◽  
Dinesh K. Pandya

Author(s):  
Dong Han ◽  
Rahma Moalla ◽  
Ignasi Fina ◽  
Valentina M. Giordano ◽  
Marc d’Esperonnat ◽  
...  

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