The equipment for measuring of concentration profiles using the spreading resistance method

2002 ◽  
Author(s):  
J. Hybler ◽  
V. Svagr
Keyword(s):  
Concentration Profiles ◽  
Spreading Resistance ◽  
Resistance Method

Millisecond Duration Annealing of Boron Implants in Silicon

1988 ◽  
Vol 100 ◽  
Author(s):  
D. A. Smith ◽  
R. A. McMahon ◽  
H. Ahmed ◽  
D. J. Godfrey
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Carrier Concentration ◽  
Sheet Resistance ◽  
Mass Spectroscopy ◽  
Concentration Profiles ◽  
Spreading Resistance ◽  
Isothermal Anneal ◽  
Wide Range ◽  
Secondary Ion

ABSTRACTA dual electron beam machine has been used to anneal boron implanted layers in order to study the diffusion and activation behaviour over a wide range of doses. The annealed implants have been characterized by spreading resistance profiling and secondary ion mass spectroscopy (SIMS). Carrier concentration profiles show that millisecond duration anneals can activate boron implants. A boron dose of 1E16 ions/cm2 was annealed to give a sheet resistance of 30 Ωsq with 40% of the implant activated. The SIMS technique showed there were no significant differences between the atomic profiles of the as-implanted samples and specimens subjected to a millisecond anneal or to a low temperature 850°C rapid isothermal anneal for 10s.

Impurity Profiles within a Shallow p‐n Junction by a New Differential Spreading Resistance Method

1976 ◽  
Vol 123 (11) ◽  
pp. 1751-1754 ◽  
Author(s):  
O. Kudoh ◽  
K. Uda ◽  
Y. Ikushima ◽  
M. Kamoshida
Keyword(s):  
Spreading Resistance ◽  
Resistance Method ◽  
Impurity Profiles

A Study of the Ion Implanted Arsenic Tail in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
S. E. Beck ◽  
R. J. Jaccodine ◽  
A. J. Filo ◽  
R. Irwin
Keyword(s):  
Deep Level ◽  
Total Concentration ◽  
Rutherford Backscattering ◽  
Concentration Profiles ◽  
Tail Region ◽  
Spreading Resistance ◽  
Ion Channeling ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Ion Implanted

ABSTRACTSpreading resistance measurements, Rutherford backscattering spectroscopy, ion channeling, and deep level capacitance transient spectroscopy are used to study ion implanted arsenic in silicon and its tail region. The following comparisons of the furnace annealed samples are made: Electrically active profiles versus total concentration profiles, tail diffusion versus total implant diffusion, and substitutional fractions. These results are compared to currently accepted models for arsenic diffusion in silicon.

Application and Improvement of the Spreading Resistance Method for p-Type 6H-SiC

2000 ◽  
Vol 338-342 ◽  
pp. 741-744 ◽  
Author(s):  
T. Gebel ◽  
D. Panknin ◽  
R. Riehn ◽  
S. Parascandola ◽  
Wolfgang Skorupa
Keyword(s):  
Spreading Resistance ◽  
Resistance Method ◽  
P Type

Characteristic of Strained SiGe Film Preventing Hydrogen from Penetrating into Si Substrate Detected by Spreading Resistance Method

2007 ◽  
Vol 46 (4A) ◽  
pp. 1622-1624 ◽  
Author(s):  
Yoshifumi Yamashita ◽  
Yoshifumi Sakamoto ◽  
Yoichi Kamiura ◽  
Takeshi Ishiyama
Keyword(s):  
Si Substrate ◽  
Spreading Resistance ◽  
Resistance Method ◽  
Strained Sige
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