Surface texturization of monocristalin silicon by wet chemical etching for high efficiency silicon solar cells

Author(s):  
E. Manea ◽  
E. Budianu ◽  
M. Purica ◽  
F. Babarada ◽  
I. Cernica ◽  
...  
2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Chien-Wei Liu ◽  
Chin-Lung Cheng ◽  
Bau-Tong Dai ◽  
Chi-Han Yang ◽  
Jun-Yuan Wang

Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW) solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs) declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.


2016 ◽  
Vol 255 ◽  
pp. 344-347 ◽  
Author(s):  
Michael Haslinger ◽  
M. Soha ◽  
S. Robert ◽  
M. Claes ◽  
Paul W. Mertens ◽  
...  

Advanced concepts for photovoltaic silicon solar cells, especially high-efficiency n-type solar cells, requires appropriate wet cleaning treatment in order to remove metallic contamination prior to high temperature processes like diffusion and passivation [1]. The cost of the cleaning process should be as low as possible that requires an optimized usage of the chemicals by increasing process tank lifetimes and developing dedicated feed and bleed recipes. The just clean enough concept has been developed to fulfil the needs of PV industry to minimize the consumption of chemicals. When the dominant contamination metal is identified in quality and quantity, a dedicated wet chemical cleaning process can be applied to remove the metal concentration from the semiconductor surface under a specified limit with the minimum volume on cleaning solution. The paper describes how to optimize a dedicated wet cleaning process for prominent metal impurities like Fe, Cu, Cr, Ti, Co and Zn. For each metal an exchange volume is determined to develop a feed and bleed recipe. The accumulation of the metal impurities in the process tank is calculated and process tank lifetimes are predicted.


2014 ◽  
Author(s):  
Vitaly S. Kalinovsky ◽  
Elena A. Grebenshchikova ◽  
Pavel A. Dmitriev ◽  
Natalia D. Il'inskaya ◽  
Evgeny V. Kontrosh ◽  
...  

2012 ◽  
Vol 101 (7) ◽  
pp. 073902 ◽  
Author(s):  
Kyungsun Ryu ◽  
Ajay Upadhyaya ◽  
Hyun-Jin Song ◽  
Chel-Jong Choi ◽  
Ajeet Rohatgi ◽  
...  

2019 ◽  
Vol 28 (3) ◽  
pp. 200-209 ◽  
Author(s):  
Maarten Eerden ◽  
Gerard J. Bauhuis ◽  
Peter Mulder ◽  
Natasha Gruginskie ◽  
Marco Passoni ◽  
...  

2012 ◽  
Vol 12 (2) ◽  
pp. 1234-1237 ◽  
Author(s):  
Kyung-Sik Shin ◽  
Hye-Jeong Park ◽  
Brijesh Kumar ◽  
Kwon-Ho Kim ◽  
Sang-Hyeob Kim ◽  
...  

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