IIIA-2 optical properties of GaAs-AlGaAs multi-quantum-well lasers/Waveguides

1983 ◽  
Vol 30 (11) ◽  
pp. 1575-1576
Author(s):  
S. Tarucha ◽  
H. Iwamura ◽  
H. Kobayaski ◽  
Y. Horikoshi ◽  
H. Okamoto
1996 ◽  
Vol 203 ◽  
pp. 261-266
Author(s):  
L. Calcagnile ◽  
G. Colì ◽  
R. Cingolani ◽  
L. Vanzetti ◽  
L. Sorba ◽  
...  

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.


2003 ◽  
Vol 20 (8) ◽  
pp. 1376-1378 ◽  
Author(s):  
Zhang Xiong ◽  
Li Ai-Zhen ◽  
Zheng Yan-Lan ◽  
Xu Gang-Yi ◽  
Qi Ming

2004 ◽  
Vol 264 (1-3) ◽  
pp. 86-91 ◽  
Author(s):  
Naoyuki Shiotsuka ◽  
Toru Takeda ◽  
Yoshitaka Okada

2018 ◽  
Vol 47 (11) ◽  
pp. 1105004
Author(s):  
徐玉兰 Xu Yulan ◽  
林中晞 Lin Zhongxi ◽  
陈景源 Chen Jingyuan ◽  
林 琦 Lin Qi ◽  
王凌华 Wang Linghua ◽  
...  

1991 ◽  
Vol 59 (19) ◽  
pp. 2375-2377 ◽  
Author(s):  
W. T. Tsang ◽  
F. S. Choa ◽  
M. C. Wu ◽  
Y. K. Chen ◽  
R. A. Logan ◽  
...  

Author(s):  
N. K. Dutta ◽  
S. G. Napholtz ◽  
A. B. Piccirilli ◽  
G. Przybylek

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