A Physics-Based TCAD Simulator for Superconducting Electronics Based on Josephson Junctions

2020 ◽  
Vol 30 (7) ◽  
pp. 1-5
Author(s):  
Prasad Sarangapani ◽  
Amrit Poudel ◽  
Lee Smith
Keyword(s):  
Josephson Junctions ◽  
Superconducting Electronics

Josephson junctions based on amorphous MoGe: prospects for use in superconducting electronics

2022 ◽  
Author(s):  
Ivan P Nevirkovets ◽  
Mikhail A Belogolovskii ◽  
John B Ketterson
Keyword(s):  
Experimental Data ◽  
Surface Morphology ◽  
Temperature Dependence ◽  
Josephson Junctions ◽  
Tunnel Junctions ◽  
Theoretical Calculations ◽  
Superconducting Transition ◽  
High Uniformity ◽  
Josephson Tunnel ◽  
Superconducting Electronics

Abstract We have fabricated and characterized all-MoGe Josephson junctions with a very thin Al/AlOx/(Al) barrier, where the amorphous MoGe films exhibit superconducting transition temperatures up to 7 K. Due to the uniformity of the surface morphology of the MoGe films, the junctions demonstrate high uniformity of their tunneling properties. The experimental data on the temperature dependence of the subgap current agree well with theoretical calculations. The results obtained imply that Josephson tunnel junctions based on amorphous superconductors are promising candidates for use in superconducting electronics, especially in applications requiring multiple stacked junctions or the creation of a nonequilibrium quasiparticle distribution.

FABRICATION PROCESS OF Nb/Al/Nb SNS JOSEPHSON JUNCTIONS FOR SUPERCONDUCTING ELECTRONICS APPLICATIONS

2003 ◽  
Vol 17 (04n06) ◽  
pp. 696-702 ◽  
Author(s):  
V. LACQUANITI ◽  
S. MAGGI ◽  
R. STENI ◽  
C. CAGLIERO ◽  
R. ROCCI ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
Critical Currents ◽  
Fabrication Process ◽  
Wide Range ◽  
Superconducting Electronics ◽  
Rough Interfaces

Overdamped Josephson junctions are gaining interest in many fields of superconducting electronics. The characteristic voltage ICRN is the parameter limiting the highest possible speed and voltage resolution of the junctions. Nb/Al/Nb technology is a good candidate for these devices because of its wide range of characteristic voltages. In our laboratory we have so far fabricated Nb/Al/Nb SNS junctions having (a) high critical currents and smooth interfaces, (b) low critical currents and smooth interfaces, (c) low critical currents and rough interfaces. However, further improvements to this technology are still needed.

Low-Tcramp-type Josephson junctions for SQUIDS

2002 ◽  
Vol 12 (3) ◽  
pp. 133-136 ◽  
Author(s):  
M. Podt ◽  
B. G.A. Rolink ◽  
J. Flokstra ◽  
H. Regalia
Keyword(s):  
Josephson Junctions

Application of silicon substrates for high-Tc Josephson junctions and SQUIDs

1998 ◽  
Vol 08 (PR3) ◽  
pp. Pr3-297-Pr3-300 ◽  
Author(s):  
S. Linzen ◽  
Y. J. Tian ◽  
U. Hübner ◽  
F. Schmidl ◽  
J. Scherbel ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
Silicon Substrates ◽  
High Tc

Intrinsic Josephson junctions formed inside ultra-thin BSCCO single crystals

2006 ◽  
Vol 20 (2) ◽  
pp. S28-S33 ◽  
Author(s):  
A Yurgens ◽  
L X You ◽  
M Torstensson ◽  
D Winkler
Keyword(s):  
Single Crystals ◽  
Josephson Junctions ◽  
Intrinsic Josephson Junctions
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