Effects of argon flow rate on electrical properties of amorphous indium gallium zinc oxide thin-film transistors
2010 ◽
Vol 57
(5)
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pp. 1009-1014
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2011 ◽
Vol 58
(12)
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pp. 4344-4353
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Keyword(s):
2009 ◽
Vol 510
(1)
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pp. 87/[1221]-95/[1229]
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2013 ◽
Vol 22
(2)
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pp. 105-110
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2015 ◽
Vol 135
(6)
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pp. 192-198
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Keyword(s):
Keyword(s):
Keyword(s):
2011 ◽
Vol 50
(3)
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pp. 03CB06
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Keyword(s):
Keyword(s):
2009 ◽
Vol 3
(7-8)
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pp. 239-241
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