Atomistic Modeling of Pocket Dopant Deactivation and Its Impact on $V_{\textrm {th}}$ Variation in Scaled Si Planar Devices Using an Atomistic Kinetic Monte Carlo Approach

2015 ◽  
Vol 62 (6) ◽  
pp. 1789-1795
Author(s):  
Taiji Noda ◽  
Christa Vrancken ◽  
Wilfried Vandervorst
Keyword(s):  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Atomistic Modeling ◽  
Monte Carlo Approach ◽  
Dopant Deactivation

Modeling Investigation of the Local Electrochemistry in Lithium-O2Batteries: A Kinetic Monte Carlo Approach

2015 ◽  
Vol 163 (3) ◽  
pp. A329-A337 ◽  
Author(s):  
Guillaume Blanquer ◽  
Yinghui Yin ◽  
Matias A. Quiroga ◽  
Alejandro A. Franco
Keyword(s):  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Approach

Improvement of nanowire distributions with a STM tip: a kinetic Monte Carlo approach

2003 ◽  
Vol 532-535 ◽  
pp. 531-535
Author(s):  
S. Baud ◽  
F. Picaud ◽  
C. Ramseyer
Keyword(s):  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Approach

Kinetic Monte Carlo approach to modeling thermal decay in perpendicular recording media

2013 ◽  
Vol 87 (6) ◽  
Author(s):  
T. J. Fal ◽  
J. I. Mercer ◽  
M. D. Leblanc ◽  
J. P. Whitehead ◽  
M. L. Plumer ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
Recording Media ◽  
Thermal Decay ◽  
Perpendicular Recording ◽  
Monte Carlo Approach

scholarly journals Kinetic Monte Carlo simulation of random deposition and scaling behavior with respect to the germination length

2020 ◽  
Vol 09 (04) ◽  
pp. 2050022
Author(s):  
Abdenour Saoudi ◽  
Linda Aissani ◽  
Grégoire Sorba ◽  
Francisco Chinesta
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Kinetic Monte Carlo ◽  
System Size ◽  
Scaling Behavior ◽  
Kinetic Monte Carlo Simulation ◽  
Monte Carlo Approach

This work aims at analyzing the scaling behavior and develop correlations during surface growing for different germination lengths. The surface growing by random deposition is simulated using a kinetic Monte Carlo approach, by considering different germination lengths. Different surface descriptors are extracted, among them the roughness and the correlation. The former allows extracting the scaling behavior, while the latter proves the existence of correlations independent of the system size but dependent on the germination length. Moreover, as in the case of random deposition with a null germination length, the growing roughness never saturates.

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