A Multiregion Approach to Modeling the Base-Collector Junction Capacitance

2016 ◽  
Vol 63 (9) ◽  
pp. 3808-3811 ◽  
Author(s):  
Tobias Nardmann ◽  
Michael Schroter ◽  
Paulius Sakalas
Keyword(s):  
Junction Capacitance ◽  
Collector Junction

Evaluation of interface junction capacitance of perovskite solar cells by direct current measurement

2019 ◽  
Author(s):  
Satoshi Uchida ◽  
Ludmila Cojocaru ◽  
Hiromi Tobita ◽  
Viraji Jayaweera ◽  
Shoji Kaneko ◽  
...  
Keyword(s):  
Solar Cells ◽  
Direct Current ◽  
Perovskite Solar Cells ◽  
Current Measurement ◽  
Junction Capacitance ◽  
Direct Current Measurement

Temperature-Dependent Logic Failure in a GaAs Power Amplifier-Duplexer Module Caused by a Subtle Parasitic Schottky Diode

2014 ◽  
Author(s):  
Rose Emergo ◽  
Steve Brockett ◽  
Pat Hamilton
Keyword(s):  
Power Amplifier ◽  
Schottky Diode ◽  
Production Test ◽  
Temperature Dependent ◽  
Cold Temperatures ◽  
Collector Junction ◽  
Power Mode ◽  
The Difference ◽  
Base Contact ◽  
Single Power

Abstract A single power amplifier-duplexer device was submitted by a customer for analysis. The device was initially considered passing when tested against the production test. However, further electrical testing suggested that the device was stuck in a single power mode for a particular frequency band at cold temperatures only. This paper outlines the systematic isolation of a parasitic Schottky diode formed by a base contactcollector punch through process defect that pulled down the input of a NOR gate leading to the incorrect logic state. Note that this parasitic Schottky diode is parallel to the basecollector junction. It was observed that the logic failure only manifested at colder temperatures because the base contact only slightly diffused into the collector layer. Since the difference in the turn-on voltages between the base-collector junction and the parasitic Schottky diode increases with decreasing temperature, the effect of the parasitic diode is only noticeable at lower temperatures.

scholarly journals Effects of nonlinear diode junction capacitance on the nose-to-nose calibration

2001 ◽  
Vol 11 (5) ◽  
pp. 196-198 ◽  
Author(s):  
K.A. Remley ◽  
D.F. Williams ◽  
D.C. DeGroot ◽  
J. Verspecht ◽  
J. Kerley
Keyword(s):  
Junction Capacitance

scholarly journals Improvement of CdS?CuxS Solar Cell Performance by CdS Etching under Illumination

1992 ◽  
Vol 45 (1) ◽  
pp. 99 ◽  
Author(s):  
AM Al-Dhafiri
Keyword(s):  
Solar Cell ◽  
Single Crystals ◽  
Spectral Response ◽  
Cell Performance ◽  
Optical Characteristics ◽  
Solar Cell Performance ◽  
Junction Capacitance ◽  
Capacitance Measurements ◽  
Mixture Phase ◽  
Etched Surface

The influence of dark and light etching of CdS single crystals on the electrical and optical characteristics of the CdS-Cu",S heterojunction is investigated. It is shown through currentvoltage characteristics, spectral response and junction capacitance measurements that the junction of these cells is strongly affected by the presence of light during the etching process. It is found that when the CuS is formed on an etched CdS surface under light a chalcocite phase (CU2S) is obtained. In contrast, when the CuS layer is grown on a dark etched surface a mixture phase of chalcocite and djurleite (CUI� 96S) is found.

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