A Compact Model and Parameter Extraction Method for a Staggered OFET With Power-Law Contact Resistance and Mobility

2019 ◽  
Vol 66 (11) ◽  
pp. 4894-4900 ◽  
Author(s):  
Sungyeop Jung ◽  
Jong Woo Jin ◽  
Vincent Mosser ◽  
Yvan Bonnassieux ◽  
Gilles Horowitz
Keyword(s):  
Contact Resistance ◽  
Power Law ◽  
Extraction Method ◽  
Parameter Extraction ◽  
Compact Model

Intrinsic device parameter extraction method for zinc oxide-based thin-film transistors

2021 ◽  
Author(s):  
Minho Yoon ◽  
Jiyoul Lee
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Contact Resistance ◽  
Thin Film Transistors ◽  
Extraction Method ◽  
Power Laws ◽  
Parameter Extraction ◽  
Modified Method ◽  
Device Parameter ◽  
Current Voltage

Abstract We present a device parameter extraction method that enables the reliable extraction of the intrinsic device parameters of zinc oxide (ZnO) thin-film transistors (TFTs). By assuming that mobility and contact resistance were modeled as gate bias-dependent power-laws, we derived a current–voltage relationship that decoupled from the contact resistance effect. In accordance with this derived relationship, we extracted the intrinsic mobility and contact resistance using the modified method, the values being consistent with the parameters extracted using the four-probe method.

scholarly journals A New Parameter-Extraction Method for DGS and its Application to the Low-Pass Filter

2004 ◽  
Vol 27 (2) ◽  
pp. 119-123 ◽  
Author(s):  
Haiwen Liu ◽  
Xiaowei Sun ◽  
Zhengfan Li
Keyword(s):  
Equivalent Circuit ◽  
Extraction Method ◽  
Circuit Simulation ◽  
Equivalent Circuit Model ◽  
Design Procedure ◽  
Parameter Extraction ◽  
Defected Ground Structure ◽  
Pass Filter ◽  
Low Pass Filter ◽  
Low Pass

A new and simple parameter-extraction method for the equivalent circuit of defected ground structure (DGS) is presented. Using this method, circuit simulation, based on the DGS equivalent-circuit model, show excellent agreements with the electromagnetic (EM) simulation. Further, our method is applied effectively to design a low-pass filter (LPF) with DGS. Comparison between simulation and measurement confirm the validity of the LPF configuration and design procedure. Simple structure and high power handling capability are obtained from the proposed LPF.

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