Efficiency Droop Suppression and Light Output Power Enhancement of Deep Ultraviolet Light-Emitting Diode by Incorporating Inverted-V-Shaped Quantum Barriers

2020 ◽  
Vol 67 (11) ◽  
pp. 4958-4962
Author(s):  
Yang Kang ◽  
Huabin Yu ◽  
Zhongjie Ren ◽  
Chong Xing ◽  
Zhongling Liu ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Output Power ◽  
Light Emitting Diode ◽  
Light Output ◽  
Efficiency Droop ◽  
Light Output Power ◽  
Light Emitting ◽  
Power Enhancement ◽  
Deep Ultraviolet

Improved light output power of GaN-based ultraviolet light-emitting diode using a mesh-type GaN/SiO2 /Al omnidirectional reflector

2017 ◽  
Vol 214 (8) ◽  
pp. 1600789
Author(s):  
Jun-Youn Won ◽  
Dae-Hyun Kim ◽  
Daesung Kang ◽  
Jun-Suk Sung ◽  
Da-Som Kim ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Output Power ◽  
Light Emitting Diode ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting

Nearly Efficiency-Droop-Free AlGaN-Based Deep-Ultraviolet Light-Emitting Diode Without Electron-Blocking Layer

2020 ◽  
Vol 142 (3) ◽  
Author(s):  
Hongfeng Jia ◽  
Huabin Yu ◽  
Zhongjie Ren ◽  
Chong Xing ◽  
Zhongling Liu ◽  
...  
Keyword(s):  
Active Region ◽  
Ultraviolet Light ◽  
Light Output ◽  
Efficiency Droop ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Device Architecture ◽  
Duv Led ◽  
Deep Ultraviolet

Abstract An aluminum-rich AlGaN layer is commonly implemented to act as an electron-blocking layer (EBL) to block electron overflow from the active region in the conventional deep-ultraviolet light-emitting diodes (DUV LEDs). Herein, we propose a DUV LED device architecture with specially designed band-engineered quantum barriers (QBs) to “serve” as an alternative approach to alleviate such overflow effect, suppressing the electron leakage, and facilitating the electron and hole injection into the active region for efficient radiative recombination. Intriguingly, a much smaller efficiency droop with a significant enhancement of light output power (LOP) by nearly 50% can be achieved at the injection current level of 120 mA in such EBL-free device, in comparison with the conventional EBL-incorporated DUV LED structure. Thus, the EBL-free device architecture provides us an alternative path toward the realization of efficient DUV light emitters.

scholarly journals Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO_2

2010 ◽  
Vol 18 (2) ◽  
pp. 1462 ◽  
Author(s):  
Chu-Young Cho ◽  
Jin-Bock Lee ◽  
Sang-Jun Lee ◽  
Sang-Heon Han ◽  
Tae-Young Park ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diode ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting ◽  
Lateral Epitaxial Overgrowth

Light Output Power Enhancement of GaN-based Vertical Light Emitting Diodes via Fabricating Surface Nanorod Arrays

2019 ◽  
Vol 16 (7) ◽  
pp. 117-122
Author(s):  
ChingHua Chiu ◽  
H. C. Kuo ◽  
T.C. Lu ◽  
S.C. Wang ◽  
C.S. Hsiao ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Nanorod Arrays ◽  
Light Output Power ◽  
Light Emitting ◽  
Power Enhancement
Sign in / Sign up

Export Citation Format

Share Document