lateral epitaxial overgrowth
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Confined lateral epitaxial overgrowth of InGaAs: Mechanisms and electronic properties

2021 ◽  
Vol 130 (8) ◽  
pp. 085302
Author(s):  
Aranya Goswami ◽  
Brian Markman ◽  
Simone T. Šuran Brunelli ◽  
Shouvik Chatterjee ◽  
Jonathan Klamkin ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Lateral Epitaxial Overgrowth

Optical properties evolution of GaN film grown via lateral epitaxial overgrowth

2020 ◽  
Vol 513 ◽  
pp. 145816 ◽  
Author(s):  
Ying Zhao ◽  
Shengrui Xu ◽  
Jincheng Zhang ◽  
Chunfu Zhang ◽  
Peixian Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Lateral Epitaxial Overgrowth ◽  
Gan Film

Using a continuous flow reactor for aqueous lateral epitaxial overgrowth of low-dislocation-density ZnO layers on honeycomb-patterned structures

CrystEngComm ◽  
2020 ◽  
Vol 22 (3) ◽  
pp. 487-496
Author(s):  
Hou-Guang Chen ◽  
Huei-Sen Wang ◽  
Shu-Han Yang ◽  
Xuan-Chen Lin
Keyword(s):  
Dislocation Density ◽  
Continuous Flow ◽  
Flow Reactor ◽  
Lateral Epitaxial Overgrowth ◽  
Continuous Flow Reactor ◽  
Low Dislocation Density ◽  
Long Duration ◽  
Patterned Structures ◽  
New Type

A new type of continuous flow reactor was used for long-duration lateral epitaxial overgrowth of low-dislocation-density ZnO layers.

Selective-area lateral epitaxial overgrowth of SiC by controlling the supersaturation in sublimation growth

CrystEngComm ◽  
2018 ◽  
Vol 20 (12) ◽  
pp. 1705-1710 ◽  
Author(s):  
Xianglong Yang ◽  
Xiufang Chen ◽  
Yan Peng ◽  
Xiaobo Hu ◽  
Xiangang Xu
Keyword(s):  
Seed Crystal ◽  
Lateral Epitaxial Overgrowth ◽  
Selective Area ◽  
Sublimation Growth

We realized the selective-area lateral epitaxial overgrowth of SiC on a 6H-SiC (0001) seed crystal by controlling the supersaturation in sublimation growth.

Nanorod assisted lateral epitaxial overgrowth of ZnO films in water at 90 °C

CrystEngComm ◽  
2014 ◽  
Vol 16 (1) ◽  
pp. 69-75 ◽  
Author(s):  
H. Q. Le ◽  
G. K. L. Goh ◽  
L.-L. Liew
Keyword(s):  
Zno Films ◽  
Lateral Epitaxial Overgrowth

Improved Quantum Efficiency in Semipolar $(1\bar{1}01)$ InGaN/GaN Quantum Wells Grown on GaN Prepared by Lateral Epitaxial Overgrowth

2013 ◽  
Vol 60 (11) ◽  
pp. 3753-3759 ◽  
Author(s):  
Lihong Zhu ◽  
Fanming Zeng ◽  
Wei Liu ◽  
Zhechuan Feng ◽  
Baolin Liu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
Lateral Epitaxial Overgrowth

AlxGa1−xN-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

2013 ◽  
Vol 103 (18) ◽  
pp. 181113 ◽  
Author(s):  
E. Cicek ◽  
R. McClintock ◽  
C. Y. Cho ◽  
B. Rahnema ◽  
M. Razeghi
Keyword(s):  
Ultraviolet Photodetector ◽  
Si Substrate ◽  
Lateral Epitaxial Overgrowth ◽  
Solar Blind
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