InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With $f_{{MAX}} =$ 1.2 THz
Akshay M. Arabhavi
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Filippo Ciabattini
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Sara Hamzeloui
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Ralf Fluckiger
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Tamara Saranovac
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...
2002 ◽
Vol 38
(6)
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pp. 289
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B.P. Yan
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C.C. Hsu
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X.Q. Wang
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E.S. Yang
W.C. Liu
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W.C. Wang
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W.L. Chang
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K.H. Yu
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S.C. Feng
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...
2002 ◽
Vol 91
(3)
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pp. 1601-1605
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M. Yee
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P. A. Houston
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J. P. R. David
1988 ◽
Vol 64
(5)
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pp. 2767-2769
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K. Taira
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H. Kawai
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K. Kaneko
2013 ◽
Vol 34
(5)
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pp. 054006
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Wei Cheng
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Yuan Wang
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Yan Zhao
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Haiyan Lu
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Hanchao Gao
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...
Yue-ming Hsin
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Chih-Hsien Lin
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Chang-Chung Fan
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Man-Fang Huang
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Kun-Chuan Lin
D. Coquillat
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V. Nodjiadjim
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A. Konczykowska
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M. Riet
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N. Dyakonova
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...
D. Coquillat
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V. Nodjiadjim
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A. Konczykowska
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N. Dyakonova
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C. Consejo
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...
Clive Poole
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Izzat Darwazeh
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Herbert Zirath
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Klas Eriksson
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Dan Kuylenstierna
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...
2005 ◽
Vol 86
(14)
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pp. 143508
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Ting-Chen Hu
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M. F. Chang
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Nils Weimann
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Jianxin Chen
◽
Young-Kai Chen